Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes

Hongping Zhao; Guangyu Liu; Nelson Tansu

doi:10.1117/12.842742

Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes

Hongping Zhao^*, Guangyu Liu, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Propagation matrix method was used to calculate the surface plasmon dispersion for metal on top of InGaN/GaN quantum wells (QWs). Purcell enhancement factor related to the slope of the surface plasmon dispersion curve was calculated for metal on top of InGaN/GaN QWs. The use of double-metallic Au/Ag layers coupled to InGaN QWs results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride lightemitting diodes.

Original language	English (US)
Title of host publication	Light-Emitting Diodes
Subtitle of host publication	Materials, Devices, and Applications for Solid State Lighting XIV
Volume	7617
DOIs	https://doi.org/10.1117/12.842742
State	Published - 2010
Externally published	Yes
Event	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV - San Francisco, CA, United States Duration: Jan 26 2010 → Jan 28 2010

Other

Other	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV
Country/Territory	United States
City	San Francisco, CA
Period	01/26/10 → 01/28/10

Keywords

III-nitride
InGaN QWs
Light-emitting diodes
Surface plasmon LEDs

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.842742

Cite this

@inproceedings{19260d2939b041138cc83725cbfbf075,

title = "Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes",

abstract = "Propagation matrix method was used to calculate the surface plasmon dispersion for metal on top of InGaN/GaN quantum wells (QWs). Purcell enhancement factor related to the slope of the surface plasmon dispersion curve was calculated for metal on top of InGaN/GaN QWs. The use of double-metallic Au/Ag layers coupled to InGaN QWs results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride lightemitting diodes.",

keywords = "III-nitride, InGaN QWs, Light-emitting diodes, Surface plasmon LEDs",

author = "Hongping Zhao and Guangyu Liu and Nelson Tansu",

year = "2010",

doi = "10.1117/12.842742",

language = "English (US)",

isbn = "9780819480132",

volume = "7617",

booktitle = "Light-Emitting Diodes",

note = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV ; Conference date: 26-01-2010 Through 28-01-2010",

}

Zhao, H, Liu, G & Tansu, N 2010, Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes. in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV. vol. 7617, 76170W, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, San Francisco, CA, United States, 01/26/10. https://doi.org/10.1117/12.842742

Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes. / Zhao, Hongping; Liu, Guangyu; Tansu, Nelson.

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV. Vol. 7617 2010. 76170W.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Tansu, Nelson

PY - 2010

Y1 - 2010

N2 - Propagation matrix method was used to calculate the surface plasmon dispersion for metal on top of InGaN/GaN quantum wells (QWs). Purcell enhancement factor related to the slope of the surface plasmon dispersion curve was calculated for metal on top of InGaN/GaN QWs. The use of double-metallic Au/Ag layers coupled to InGaN QWs results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride lightemitting diodes.

AB - Propagation matrix method was used to calculate the surface plasmon dispersion for metal on top of InGaN/GaN quantum wells (QWs). Purcell enhancement factor related to the slope of the surface plasmon dispersion curve was calculated for metal on top of InGaN/GaN QWs. The use of double-metallic Au/Ag layers coupled to InGaN QWs results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride lightemitting diodes.

KW - III-nitride

KW - InGaN QWs

KW - Light-emitting diodes

KW - Surface plasmon LEDs

UR - http://www.scopus.com/inward/record.url?scp=77951664455&partnerID=8YFLogxK

U2 - 10.1117/12.842742

DO - 10.1117/12.842742

M3 - Conference contribution

AN - SCOPUS:77951664455

SN - 9780819480132

VL - 7617

BT - Light-Emitting Diodes

T2 - Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV

Y2 - 26 January 2010 through 28 January 2010

ER -

Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes

Abstract

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Keywords

ASJC Scopus subject areas

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