Abstract
Propagation matrix method was used to calculate the surface plasmon dispersion for metal on top of InGaN/GaN quantum wells (QWs). Purcell enhancement factor related to the slope of the surface plasmon dispersion curve was calculated for metal on top of InGaN/GaN QWs. The use of double-metallic Au/Ag layers coupled to InGaN QWs results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride lightemitting diodes.
Original language | English (US) |
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Title of host publication | Light-Emitting Diodes |
Subtitle of host publication | Materials, Devices, and Applications for Solid State Lighting XIV |
Volume | 7617 |
DOIs | |
State | Published - 2010 |
Externally published | Yes |
Event | Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV - San Francisco, CA, United States Duration: Jan 26 2010 → Jan 28 2010 |
Other
Other | Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 01/26/10 → 01/28/10 |
Keywords
- III-nitride
- InGaN QWs
- Light-emitting diodes
- Surface plasmon LEDs
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering