Surface-Controlled Metal Oxide Resistive Memory

Jr-Jian Ke; Kyoko Namura; Jose Ramon Duran Retamal; Chin-Hsiang Ho; Haruhiko Minamitake; Tzu-Chiao Wei; Dung-Sheng Tsai; Chun-Ho Lin; Motofumi Suzuki; Jr-Hau He

doi:10.1109/LED.2015.2493343

Surface-Controlled Metal Oxide Resistive Memory

Jr-Jian Ke, Kyoko Namura, Jose Ramon Duran Retamal, Chin-Hsiang Ho, Haruhiko Minamitake, Tzu-Chiao Wei, Dung-Sheng Tsai, Chun-Ho Lin, Motofumi Suzuki, Jr-Hau He

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

To explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM were studied. The thickness-independent resistance and the higher switching probability of ZnO ReRAM with rough surfaces indicate the importance of surface oxygen chemisorption on the switching process. Furthermore, the improvements in switching probability, switching voltage and resistance distribution observed for ReRAM with rough surfaces can be attributed to the stable oxygen adatoms under various ambience conditions. The findings validate the surface-controlled stability and uniformity of ReRAM and can serve as the guideline for developing practical device applications.

Original language	English (US)
Pages (from-to)	1307-1309
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	12
DOIs	https://doi.org/10.1109/LED.2015.2493343
State	Published - Oct 28 2015

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KAUST Repository Item: Exported on 2020-10-01

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10.1109/LED.2015.2493343

https://repository.kaust.edu.sa/bitstream/10754/581765/1/07310859.pdf

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abstract = "To explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM were studied. The thickness-independent resistance and the higher switching probability of ZnO ReRAM with rough surfaces indicate the importance of surface oxygen chemisorption on the switching process. Furthermore, the improvements in switching probability, switching voltage and resistance distribution observed for ReRAM with rough surfaces can be attributed to the stable oxygen adatoms under various ambience conditions. The findings validate the surface-controlled stability and uniformity of ReRAM and can serve as the guideline for developing practical device applications.",

author = "Jr-Jian Ke and Kyoko Namura and {Duran Retamal}, {Jose Ramon} and Chin-Hsiang Ho and Haruhiko Minamitake and Tzu-Chiao Wei and Dung-Sheng Tsai and Chun-Ho Lin and Motofumi Suzuki and Jr-Hau He",

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AU - Ke, Jr-Jian

AU - Namura, Kyoko

AU - Duran Retamal, Jose Ramon

AU - Ho, Chin-Hsiang

AU - Minamitake, Haruhiko

AU - Wei, Tzu-Chiao

AU - Tsai, Dung-Sheng

AU - Lin, Chun-Ho

AU - Suzuki, Motofumi

AU - He, Jr-Hau

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2015/10/28

Y1 - 2015/10/28

N2 - To explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM were studied. The thickness-independent resistance and the higher switching probability of ZnO ReRAM with rough surfaces indicate the importance of surface oxygen chemisorption on the switching process. Furthermore, the improvements in switching probability, switching voltage and resistance distribution observed for ReRAM with rough surfaces can be attributed to the stable oxygen adatoms under various ambience conditions. The findings validate the surface-controlled stability and uniformity of ReRAM and can serve as the guideline for developing practical device applications.

AB - To explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM were studied. The thickness-independent resistance and the higher switching probability of ZnO ReRAM with rough surfaces indicate the importance of surface oxygen chemisorption on the switching process. Furthermore, the improvements in switching probability, switching voltage and resistance distribution observed for ReRAM with rough surfaces can be attributed to the stable oxygen adatoms under various ambience conditions. The findings validate the surface-controlled stability and uniformity of ReRAM and can serve as the guideline for developing practical device applications.

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EP - 1309

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Surface-Controlled Metal Oxide Resistive Memory

Abstract

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