Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

A. G. Altynnikov; A. G. Gagarin; M. M. Gaidukov; A. V. Tumarkin; P. K. Petrov; N. Alford; A. B. Kozyrev

doi:10.1063/1.4863436

Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

A. G. Altynnikov, A. G. Gagarin, M. M. Gaidukov, A. V. Tumarkin, P. K. Petrov, N. Alford, A. B. Kozyrev

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7 Scopus citations

Abstract

The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. © 2014 Author(s).

Original language	English (US)
Pages (from-to)	042903
Journal	Applied Physics Letters
Volume	104
Issue number	4
DOIs	https://doi.org/10.1063/1.4863436
State	Published - Jan 27 2014
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This study was partially supported by the Ministry of Science and Education of the Russian Federation and by RFBR, research Project No. 13-02-12096 ofi-m. P. K. Petrov and N. Alford acknowledge the financial support from the EPSRC, UK (grants EP/G060940/1 and EP/H023003/1) and the King Abdullah University for Science and Technology (KAUST) Global Collaborative Research Academic Excellence Alliance (AEA) and Academic Partnership Programs (APP).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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@article{10400b9d42f348a4a3697a37f5be2843,

title = "Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere",

abstract = "The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. {\textcopyright} 2014 Author(s).",

author = "Altynnikov, {A. G.} and Gagarin, {A. G.} and Gaidukov, {M. M.} and Tumarkin, {A. V.} and Petrov, {P. K.} and N. Alford and Kozyrev, {A. B.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This study was partially supported by the Ministry of Science and Education of the Russian Federation and by RFBR, research Project No. 13-02-12096 ofi-m. P. K. Petrov and N. Alford acknowledge the financial support from the EPSRC, UK (grants EP/G060940/1 and EP/H023003/1) and the King Abdullah University for Science and Technology (KAUST) Global Collaborative Research Academic Excellence Alliance (AEA) and Academic Partnership Programs (APP). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2014",

month = jan,

day = "27",

doi = "10.1063/1.4863436",

language = "English (US)",

volume = "104",

pages = "042903",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

AU - Altynnikov, A. G.

AU - Gagarin, A. G.

AU - Gaidukov, M. M.

AU - Tumarkin, A. V.

AU - Petrov, P. K.

AU - Alford, N.

AU - Kozyrev, A. B.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This study was partially supported by the Ministry of Science and Education of the Russian Federation and by RFBR, research Project No. 13-02-12096 ofi-m. P. K. Petrov and N. Alford acknowledge the financial support from the EPSRC, UK (grants EP/G060940/1 and EP/H023003/1) and the King Abdullah University for Science and Technology (KAUST) Global Collaborative Research Academic Excellence Alliance (AEA) and Academic Partnership Programs (APP). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2014/1/27

Y1 - 2014/1/27

N2 - The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. © 2014 Author(s).

AB - The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. © 2014 Author(s).

UR - http://hdl.handle.net/10754/599805

UR - http://aip.scitation.org/doi/10.1063/1.4863436

UR - http://www.scopus.com/inward/record.url?scp=84893295894&partnerID=8YFLogxK

U2 - 10.1063/1.4863436

DO - 10.1063/1.4863436

M3 - Article

SN - 0003-6951

VL - 104

SP - 042903

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

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