Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer

P. Cusumano*, B. S. Ooi, A. Saher Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh, B. Voegele, M. J. Rose

*Corresponding author for this work

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Engineering

Material Science