Superluminescent diodes using quantum dots superlattice

Clara E. Dimas, Hery S. Djie, Boon S. Ooi*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

16 Scopus citations


We report a broadband superluminescence diode using InGaAs/GaAs self-assembled quantum dots structure grown by atomic layer molecular beam epitaxy. This two-section SLD consists of weakly guided-rib-waveguide gain section (4 μm wide) butt-connected to a broad-area photon absorber (50 μm wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces a low ripple spectrum (<0.3 dB) with a spectral bandwidth of 135 nm at a peak wavelength of 1210 nm under continuous wave operation (20 °C) at 105 mA current injection.

Original languageEnglish (US)
Pages (from-to)153-156
Number of pages4
JournalJournal of Crystal Growth
Issue number1
StatePublished - Feb 2 2006
Externally publishedYes
EventInternational Conference on Materials for Advanced Technologies -
Duration: Jul 4 2005Jul 8 2005


  • A1. Quantum dot
  • B1. Superluminescent diodes
  • B2. III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry


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