Subnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells

Aravind Kumar Chandiran; Nicolas Tetreault; Robin Humphry-Baker; Florian Kessler; Etienne Baranoff; Chenyi Yi; Mohammad Khaja Nazeeruddin; Michael Grätzel

doi:10.1021/nl301023r

Subnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells

Aravind Kumar Chandiran, Nicolas Tetreault, Robin Humphry-Baker, Florian Kessler, Etienne Baranoff, Chenyi Yi, Mohammad Khaja Nazeeruddin, Michael Grätzel

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177 Scopus citations

Abstract

Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga 2O 3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO 2 conduction band and the hole injection into the electrolyte are characterized in detail. © 2012 American Chemical Society.

Original language	English (US)
Pages (from-to)	3941-3947
Number of pages	7
Journal	Nano Letters
Volume	12
Issue number	8
DOIs	https://doi.org/10.1021/nl301023r
State	Published - Jul 6 2012
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-C1-015- 21
Acknowledgements: The authors acknowledge the financial contribution from EU FP7 project "ORION" grant agreement no. NMP-229036. This publication is partially based on work supported by the Center for Advanced Molecular Photovoltaics (award no. KUS-C1-015- 21), made by King Abdullah University of Science and Technology (KAUST). A.K.C. is grateful for financial support from the Balzan foundation as part of the 2009 Balzan Prize award to M.G. A.K.C. also thanks Dr. Hoi Nok Tsao and Dr. Aswani Yella for their valuable suggestions on electrolyte composition.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1021/nl301023r

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title = "Subnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells",

abstract = "Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga 2O 3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO 2 conduction band and the hole injection into the electrolyte are characterized in detail. {\textcopyright} 2012 American Chemical Society.",

author = "Chandiran, {Aravind Kumar} and Nicolas Tetreault and Robin Humphry-Baker and Florian Kessler and Etienne Baranoff and Chenyi Yi and Nazeeruddin, {Mohammad Khaja} and Michael Gr{\"a}tzel",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-C1-015- 21 Acknowledgements: The authors acknowledge the financial contribution from EU FP7 project {"}ORION{"} grant agreement no. NMP-229036. This publication is partially based on work supported by the Center for Advanced Molecular Photovoltaics (award no. KUS-C1-015- 21), made by King Abdullah University of Science and Technology (KAUST). A.K.C. is grateful for financial support from the Balzan foundation as part of the 2009 Balzan Prize award to M.G. A.K.C. also thanks Dr. Hoi Nok Tsao and Dr. Aswani Yella for their valuable suggestions on electrolyte composition. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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AU - Chandiran, Aravind Kumar

AU - Tetreault, Nicolas

AU - Humphry-Baker, Robin

AU - Kessler, Florian

AU - Baranoff, Etienne

AU - Yi, Chenyi

AU - Nazeeruddin, Mohammad Khaja

AU - Grätzel, Michael

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-C1-015- 21 Acknowledgements: The authors acknowledge the financial contribution from EU FP7 project "ORION" grant agreement no. NMP-229036. This publication is partially based on work supported by the Center for Advanced Molecular Photovoltaics (award no. KUS-C1-015- 21), made by King Abdullah University of Science and Technology (KAUST). A.K.C. is grateful for financial support from the Balzan foundation as part of the 2009 Balzan Prize award to M.G. A.K.C. also thanks Dr. Hoi Nok Tsao and Dr. Aswani Yella for their valuable suggestions on electrolyte composition. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2012/7/6

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N2 - Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga 2O 3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO 2 conduction band and the hole injection into the electrolyte are characterized in detail. © 2012 American Chemical Society.

AB - Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga 2O 3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO 2 conduction band and the hole injection into the electrolyte are characterized in detail. © 2012 American Chemical Society.

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JO - Nano Letters

JF - Nano Letters

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ER -

Subnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells

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