Sub-terahertz testing of silicon MOSFET

W. Stillman; D. Veksler; T. A. Elkhatib; K. Salama; F. Guarin; M. S. Shur

doi:10.1049/el:20089418

Sub-terahertz testing of silicon MOSFET

W. Stillman^*, D. Veksler, T. A. Elkhatib, K. Salama, F. Guarin, M. S. Shur

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

The difference in the terahertz response of Si MOSFETs with identical above threshold characteristics but different values of the leakage current in the below threshold regime is demonstrated. The results show that the terahertz response test can be used as a complementary testing technique of a Si MOS VLSI under bias.

Original language	English (US)
Pages (from-to)	1325-1327
Number of pages	3
Journal	Electronics Letters
Volume	44
Issue number	22
DOIs	https://doi.org/10.1049/el:20089418
State	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:20089418

Cite this

@article{77929ea00f654d23bab5df092521eaf8,

title = "Sub-terahertz testing of silicon MOSFET",

abstract = "The difference in the terahertz response of Si MOSFETs with identical above threshold characteristics but different values of the leakage current in the below threshold regime is demonstrated. The results show that the terahertz response test can be used as a complementary testing technique of a Si MOS VLSI under bias.",

author = "W. Stillman and D. Veksler and Elkhatib, {T. A.} and K. Salama and F. Guarin and Shur, {M. S.}",

year = "2008",

doi = "10.1049/el:20089418",

language = "English (US)",

volume = "44",

pages = "1325--1327",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "22",

}

TY - JOUR

T1 - Sub-terahertz testing of silicon MOSFET

AU - Stillman, W.

AU - Veksler, D.

AU - Elkhatib, T. A.

AU - Salama, K.

AU - Guarin, F.

AU - Shur, M. S.

PY - 2008

Y1 - 2008

N2 - The difference in the terahertz response of Si MOSFETs with identical above threshold characteristics but different values of the leakage current in the below threshold regime is demonstrated. The results show that the terahertz response test can be used as a complementary testing technique of a Si MOS VLSI under bias.

AB - The difference in the terahertz response of Si MOSFETs with identical above threshold characteristics but different values of the leakage current in the below threshold regime is demonstrated. The results show that the terahertz response test can be used as a complementary testing technique of a Si MOS VLSI under bias.

UR - http://www.scopus.com/inward/record.url?scp=54849418733&partnerID=8YFLogxK

U2 - 10.1049/el:20089418

DO - 10.1049/el:20089418

M3 - Article

AN - SCOPUS:54849418733

SN - 0013-5194

VL - 44

SP - 1325

EP - 1327

JO - Electronics Letters

JF - Electronics Letters

IS - 22

ER -

Sub-terahertz testing of silicon MOSFET

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this