Abstract
In this work we employed lithographic techniques, combined with sputtering depositions, to fabricate semiconductor metal-oxide (MOX) gas sensors with controlled grain dimensions. The basic idea is to replace the continuous sensing film of standard MOX sensors with a pattern of wires in the sub-micron scale, thus controlling the lateral size of the grains. Regarding the fabrication process, we followed two different approaches: a plain lift-off technique and a substrate patterning process. We present a comparison between the results of both the approaches. Furthermore, we tested the electrical responses to several gases and compared them with those of continuous film sensors. The experimental data highlight an improvement for the patterned sensors.
Original language | English (US) |
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Article number | A2.8 |
Pages (from-to) | 103-108 |
Number of pages | 6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 828 |
State | Published - 2005 |
Externally published | Yes |
Event | Semiconductor Materials for Sensing - Boston, MA, United States Duration: Nov 29 2004 → Dec 2 2004 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering