Abstract
In 0.11 um CMOS technology development, un-desired Cobalt salicide was found to be the cause of severe yield loss. Cobalt salicide was delaminated due to both the mechanical stress on active/ shallow trench isolation (STI) and the improper Cobalt salicidation. This paper presents detailed analysis of failure mechanism. X-ray diffraction (XRD) was used for the analysis of Cobalt salicide on patterned wafers to determine whether the CoSi2 phase is present or not. Our experimental results showed that this method could be used for the analysis of Cobalt salicid on patterned wafers.
Original language | English (US) |
---|---|
Pages | 176-180 |
Number of pages | 5 |
State | Published - 2005 |
Externally published | Yes |
Event | 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 - Singapore, Singapore Duration: Jun 27 2005 → Jul 1 2005 |
Other
Other | 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 |
---|---|
Country/Territory | Singapore |
City | Singapore |
Period | 06/27/05 → 07/1/05 |
ASJC Scopus subject areas
- General Engineering