Study of TiO2 film growth mechanisms in low-pressure plasma by in situ real-time spectroscopic ellipsometry

A. Amassian, P. Desjardins, L. Martinu*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

46 Scopus citations


We investigate the initial stages of growth of TiO2 films prepared by plasma-enhanced chemical vapor deposition on plasma pre-oxidized c-Si, using in situ real-time spectroscopic ellipsometry. The optical properties of TiO2 films were parameterized from 245 to 1000 nm using the Tauc-Lorentz oscillator and the effective medium approximation. For thin films grown at low substrate temperature (Ts = 75 °C) and deposition rate (0.3<r<3.5 Å/s), effective refractive index (n 550 at λ = 550 nm) stabilization, consistent with island coalescence, was observed for thickness, d, of only 12-15 Å, independent of r. When compared at final thickness (d∼85 Å), all films possessed similar optical properties in the visible (n550 = 2.30-2.33), with most significant differences in n(λ) and k(λ) observed in the interband region (λ<385 nm). A thicker film (d = 700 Å) grown at r = 3.5 Å/s was found to exhibit similar growth behavior for d<85 Å. An additional n550 increase in the order of 0.03 observed for 85<d<280 Å, was attributed to refractive index inhomogeneity.

Original languageEnglish (US)
Pages (from-to)40-45
Number of pages6
JournalThin Solid Films
StatePublished - Jan 30 2004
Externally publishedYes
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: Apr 28 2002May 2 2002


  • In situ ellipsometry
  • Optical coatings
  • Plasma-enhanced chemical vapor deposition
  • Titanium dioxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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