Study of Si-Ge interdiffusion with phosphorus doping

Feiyang Cai; Dalaver H. Anjum; Xixiang Zhang; Guangrui Xia

doi:10.1063/1.4966570

Study of Si-Ge interdiffusion with phosphorus doping

Feiyang Cai, Dalaver H. Anjum, Xixiang Zhang, Guangrui Xia

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75

Original language	English (US)
Pages (from-to)	165108
Journal	Journal of Applied Physics
Volume	120
Issue number	16
DOIs	https://doi.org/10.1063/1.4966570
State	Published - Oct 28 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was funded by the Natural Science and Engineering Research Council of Canada (NSERC) and Crosslight Software Inc. The XRD measurements were performed in the Semiconductor Defect Spectroscopy Laboratory at Simon Fraser University. Dr. Stephen P. Smith at Evans Analytical Group is acknowledged for helpful discussions on SIMS measurements. Gary Riggott and Professor Judy L. Hoyt from Microsystems Technology Laboratories, Massachusetts Institute of Technology are acknowledged for the epitaxy growth of the samples. Professor Patricia Mooney from the Department of Physics at Simon Fraser University, Dr. Yiheng Lin and Mr. Guangnan Zhou from the Department of Materials Engineering, the University of British Columbia are acknowledged for the help in XRD measurements and helpful discussions.

Access to Document

10.1063/1.4966570

https://repository.kaust.edu.sa/bitstream/10754/621849/1/1.4966570.pdf

Cite this

@article{83446b1000db4e5c9ad866c5fcf3e597,

title = "Study of Si-Ge interdiffusion with phosphorus doping",

abstract = "Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75",

author = "Feiyang Cai and Anjum, {Dalaver H.} and Xixiang Zhang and Guangrui Xia",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was funded by the Natural Science and Engineering Research Council of Canada (NSERC) and Crosslight Software Inc. The XRD measurements were performed in the Semiconductor Defect Spectroscopy Laboratory at Simon Fraser University. Dr. Stephen P. Smith at Evans Analytical Group is acknowledged for helpful discussions on SIMS measurements. Gary Riggott and Professor Judy L. Hoyt from Microsystems Technology Laboratories, Massachusetts Institute of Technology are acknowledged for the epitaxy growth of the samples. Professor Patricia Mooney from the Department of Physics at Simon Fraser University, Dr. Yiheng Lin and Mr. Guangnan Zhou from the Department of Materials Engineering, the University of British Columbia are acknowledged for the help in XRD measurements and helpful discussions.",

year = "2016",

month = oct,

day = "28",

doi = "10.1063/1.4966570",

language = "English (US)",

volume = "120",

pages = "165108",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Study of Si-Ge interdiffusion with phosphorus doping

AU - Cai, Feiyang

AU - Anjum, Dalaver H.

AU - Zhang, Xixiang

AU - Xia, Guangrui

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was funded by the Natural Science and Engineering Research Council of Canada (NSERC) and Crosslight Software Inc. The XRD measurements were performed in the Semiconductor Defect Spectroscopy Laboratory at Simon Fraser University. Dr. Stephen P. Smith at Evans Analytical Group is acknowledged for helpful discussions on SIMS measurements. Gary Riggott and Professor Judy L. Hoyt from Microsystems Technology Laboratories, Massachusetts Institute of Technology are acknowledged for the epitaxy growth of the samples. Professor Patricia Mooney from the Department of Physics at Simon Fraser University, Dr. Yiheng Lin and Mr. Guangnan Zhou from the Department of Materials Engineering, the University of British Columbia are acknowledged for the help in XRD measurements and helpful discussions.

PY - 2016/10/28

Y1 - 2016/10/28

N2 - Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75

AB - Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75

UR - http://hdl.handle.net/10754/621849

UR - http://scitation.aip.org/content/aip/journal/jap/120/16/10.1063/1.4966570

UR - http://www.scopus.com/inward/record.url?scp=84993953579&partnerID=8YFLogxK

U2 - 10.1063/1.4966570

DO - 10.1063/1.4966570

M3 - Article

SN - 0021-8979

VL - 120

SP - 165108

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 16

ER -

Study of Si-Ge interdiffusion with phosphorus doping

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this