Study of Si-Ge interdiffusion with phosphorus doping

Feiyang Cai, Dalaver H. Anjum, Xixiang Zhang, Guangrui Xia

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75
Original languageEnglish (US)
Pages (from-to)165108
JournalJournal of Applied Physics
Issue number16
StatePublished - Oct 28 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was funded by the Natural Science and Engineering Research Council of Canada (NSERC) and Crosslight Software Inc. The XRD measurements were performed in the Semiconductor Defect Spectroscopy Laboratory at Simon Fraser University. Dr. Stephen P. Smith at Evans Analytical Group is acknowledged for helpful discussions on SIMS measurements. Gary Riggott and Professor Judy L. Hoyt from Microsystems Technology Laboratories, Massachusetts Institute of Technology are acknowledged for the epitaxy growth of the samples. Professor Patricia Mooney from the Department of Physics at Simon Fraser University, Dr. Yiheng Lin and Mr. Guangnan Zhou from the Department of Materials Engineering, the University of British Columbia are acknowledged for the help in XRD measurements and helpful discussions.


Dive into the research topics of 'Study of Si-Ge interdiffusion with phosphorus doping'. Together they form a unique fingerprint.

Cite this