Study of nanometer resolution resist slope for the UVIII chemically amplified resist

A. Gerardino; M. Gentili; E. Di Fabrizio; R. Calarco; L. Mastrogiacomo

doi:10.1016/S0167-9317(99)00062-3

Study of nanometer resolution resist slope for the UVIII chemically amplified resist

A. Gerardino^*, M. Gentili, E. Di Fabrizio, R. Calarco, L. Mastrogiacomo

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The performances of the Shipley UVIII chemically amplified resist (a positive tone) for nanostructure fabrication in silicon have been investigated. We studied the resist profile behaviour for high aspect ratio structure (ratio exceeding 1:5) with resolution down to 60 nm. The resist slope was investigated as a function of resist thickness, e-beam diameter, nominal linewidth and the development condition. Undercut profiles have been exploited for the deposition of nanometer metal lines by a lift-off technique. The metal mask allows the dry-etching of nanostructures in silicon.

Original language	English (US)
Pages (from-to)	201-204
Number of pages	4
Journal	Microelectronic Engineering
Volume	46
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(99)00062-3
State	Published - May 1999
Externally published	Yes
Event	Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98) - Leuven Duration: Sep 22 1998 → Sep 24 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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title = "Study of nanometer resolution resist slope for the UVIII chemically amplified resist",

abstract = "The performances of the Shipley UVIII chemically amplified resist (a positive tone) for nanostructure fabrication in silicon have been investigated. We studied the resist profile behaviour for high aspect ratio structure (ratio exceeding 1:5) with resolution down to 60 nm. The resist slope was investigated as a function of resist thickness, e-beam diameter, nominal linewidth and the development condition. Undercut profiles have been exploited for the deposition of nanometer metal lines by a lift-off technique. The metal mask allows the dry-etching of nanostructures in silicon.",

author = "A. Gerardino and M. Gentili and {Di Fabrizio}, E. and R. Calarco and L. Mastrogiacomo",

year = "1999",

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T1 - Study of nanometer resolution resist slope for the UVIII chemically amplified resist

AU - Gerardino, A.

AU - Gentili, M.

AU - Di Fabrizio, E.

AU - Calarco, R.

AU - Mastrogiacomo, L.

PY - 1999/5

Y1 - 1999/5

N2 - The performances of the Shipley UVIII chemically amplified resist (a positive tone) for nanostructure fabrication in silicon have been investigated. We studied the resist profile behaviour for high aspect ratio structure (ratio exceeding 1:5) with resolution down to 60 nm. The resist slope was investigated as a function of resist thickness, e-beam diameter, nominal linewidth and the development condition. Undercut profiles have been exploited for the deposition of nanometer metal lines by a lift-off technique. The metal mask allows the dry-etching of nanostructures in silicon.

AB - The performances of the Shipley UVIII chemically amplified resist (a positive tone) for nanostructure fabrication in silicon have been investigated. We studied the resist profile behaviour for high aspect ratio structure (ratio exceeding 1:5) with resolution down to 60 nm. The resist slope was investigated as a function of resist thickness, e-beam diameter, nominal linewidth and the development condition. Undercut profiles have been exploited for the deposition of nanometer metal lines by a lift-off technique. The metal mask allows the dry-etching of nanostructures in silicon.

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U2 - 10.1016/S0167-9317(99)00062-3

DO - 10.1016/S0167-9317(99)00062-3

M3 - Conference article

AN - SCOPUS:0033131648

SN - 0167-9317

VL - 46

SP - 201

EP - 204

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

T2 - Proceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98)

Y2 - 22 September 1998 through 24 September 1998

ER -

Study of nanometer resolution resist slope for the UVIII chemically amplified resist

Abstract

ASJC Scopus subject areas

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