Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks

Ivona Z. Mitrovic; G. Simutis; W. M. Davey; Naser Sedghi; Stephen D. Hall; Vinod R. Dhanak; Ioannis Alexandrou; Qingxiao Wang; Joao Marcelo J. Lopes; Jürgen M. Schubert

doi:10.1016/j.mee.2011.03.051

Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks

Ivona Z. Mitrovic, G. Simutis, W. M. Davey, Naser Sedghi, Stephen D. Hall, Vinod R. Dhanak, Ioannis Alexandrou, Qingxiao Wang, Joao Marcelo J. Lopes, Jürgen M. Schubert

Imaging & Characterization Core Lab

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

TiN/LaLuO3 (LLO) gate stacks formed by molecular beam deposition have been investigated by X-ray photoelectron spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, scanning transmission electron microscopy, electron energy loss spectroscopy and atomic force microscopy. The results indicate an amorphous structure for deposited LLO films. The band offset between the Fermi level of TiN and valence band of LLO is estimated to be 2.65 ± 0.05 eV. A weaker La-O-Lu bond and a prominent Ti2p sub-peak which relates to Ti bond to interstitial oxygen have been identified for an ultra-thin 1.7 nm TiN/3 nm LLO gate stack. The angle-dependent XPS analysis of Si2s spectra as well as shifts of La4d, La3d and Lu4d core levels suggests a silicate-type with Si-rich SiOx LLO/Si interface. Symmetrical valence and conduction band offsets for LLO to Si of 2.2 eV and the bandgap of 5.5 ± 0.1 eV have been derived from the measurements. The band alignment for ultra-thin TiN/LLO gate stack is affected by structural changes. Copyright © 2011 Published by Elsevier B.V. All rights reserved.

Original language	English (US)
Title of host publication	Microelectronic Engineering
Publisher	Elsevier BV
Pages	1495-1498
Number of pages	4
DOIs	https://doi.org/10.1016/j.mee.2011.03.051
State	Published - Jul 2011

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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10.1016/j.mee.2011.03.051

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@inproceedings{4f55556d8f1448559a19a1b3417585c0,

title = "Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks",

abstract = "TiN/LaLuO3 (LLO) gate stacks formed by molecular beam deposition have been investigated by X-ray photoelectron spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, scanning transmission electron microscopy, electron energy loss spectroscopy and atomic force microscopy. The results indicate an amorphous structure for deposited LLO films. The band offset between the Fermi level of TiN and valence band of LLO is estimated to be 2.65 ± 0.05 eV. A weaker La-O-Lu bond and a prominent Ti2p sub-peak which relates to Ti bond to interstitial oxygen have been identified for an ultra-thin 1.7 nm TiN/3 nm LLO gate stack. The angle-dependent XPS analysis of Si2s spectra as well as shifts of La4d, La3d and Lu4d core levels suggests a silicate-type with Si-rich SiOx LLO/Si interface. Symmetrical valence and conduction band offsets for LLO to Si of 2.2 eV and the bandgap of 5.5 ± 0.1 eV have been derived from the measurements. The band alignment for ultra-thin TiN/LLO gate stack is affected by structural changes. Copyright {\textcopyright} 2011 Published by Elsevier B.V. All rights reserved.",

author = "Mitrovic, {Ivona Z.} and G. Simutis and Davey, {W. M.} and Naser Sedghi and Hall, {Stephen D.} and Dhanak, {Vinod R.} and Ioannis Alexandrou and Qingxiao Wang and Lopes, {Joao Marcelo J.} and Schubert, {J{\"u}rgen M.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2011",

month = jul,

doi = "10.1016/j.mee.2011.03.051",

language = "English (US)",

pages = "1495--1498",

booktitle = "Microelectronic Engineering",

publisher = "Elsevier BV",

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T1 - Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks

AU - Mitrovic, Ivona Z.

AU - Simutis, G.

AU - Davey, W. M.

AU - Sedghi, Naser

AU - Hall, Stephen D.

AU - Dhanak, Vinod R.

AU - Alexandrou, Ioannis

AU - Wang, Qingxiao

AU - Lopes, Joao Marcelo J.

AU - Schubert, Jürgen M.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2011/7

Y1 - 2011/7

N2 - TiN/LaLuO3 (LLO) gate stacks formed by molecular beam deposition have been investigated by X-ray photoelectron spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, scanning transmission electron microscopy, electron energy loss spectroscopy and atomic force microscopy. The results indicate an amorphous structure for deposited LLO films. The band offset between the Fermi level of TiN and valence band of LLO is estimated to be 2.65 ± 0.05 eV. A weaker La-O-Lu bond and a prominent Ti2p sub-peak which relates to Ti bond to interstitial oxygen have been identified for an ultra-thin 1.7 nm TiN/3 nm LLO gate stack. The angle-dependent XPS analysis of Si2s spectra as well as shifts of La4d, La3d and Lu4d core levels suggests a silicate-type with Si-rich SiOx LLO/Si interface. Symmetrical valence and conduction band offsets for LLO to Si of 2.2 eV and the bandgap of 5.5 ± 0.1 eV have been derived from the measurements. The band alignment for ultra-thin TiN/LLO gate stack is affected by structural changes. Copyright © 2011 Published by Elsevier B.V. All rights reserved.

AB - TiN/LaLuO3 (LLO) gate stacks formed by molecular beam deposition have been investigated by X-ray photoelectron spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, scanning transmission electron microscopy, electron energy loss spectroscopy and atomic force microscopy. The results indicate an amorphous structure for deposited LLO films. The band offset between the Fermi level of TiN and valence band of LLO is estimated to be 2.65 ± 0.05 eV. A weaker La-O-Lu bond and a prominent Ti2p sub-peak which relates to Ti bond to interstitial oxygen have been identified for an ultra-thin 1.7 nm TiN/3 nm LLO gate stack. The angle-dependent XPS analysis of Si2s spectra as well as shifts of La4d, La3d and Lu4d core levels suggests a silicate-type with Si-rich SiOx LLO/Si interface. Symmetrical valence and conduction band offsets for LLO to Si of 2.2 eV and the bandgap of 5.5 ± 0.1 eV have been derived from the measurements. The band alignment for ultra-thin TiN/LLO gate stack is affected by structural changes. Copyright © 2011 Published by Elsevier B.V. All rights reserved.

UR - http://hdl.handle.net/10754/564395

UR - https://linkinghub.elsevier.com/retrieve/pii/S0167931711003108

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U2 - 10.1016/j.mee.2011.03.051

DO - 10.1016/j.mee.2011.03.051

M3 - Conference contribution

SP - 1495

EP - 1498

BT - Microelectronic Engineering

PB - Elsevier BV

ER -

Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks

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