Study of high nitrogen compositions GaNAs and GaInNAs material quality by x-ray diffraction and photoluminescence

T. K. Ng; S. F. Yoon; S. Z. Wang; W. K. Loke; W. J. Fan

Study of high nitrogen compositions GaNAs and GaInNAs material quality by x-ray diffraction and photoluminescence

T. K. Ng^*, S. F. Yoon, S. Z. Wang, W. K. Loke, W. J. Fan

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

GaNAs and GaInNAs growths are subjects of considerable interest due to its technological importance in long wavelength lasers emitting within the optical-fiber communication wavelength window (1.31 - 1.55 μm). We study GaNAs and GaInNAs materials growth on (100) semi-insulating GaAs substrate with high nitrogen compositions (>2%) using a solid source molecular beam epitaxy (SSMBE) system in conjunction with a RF plasma source. GaNAs layer with high nitrogen compositions of 4.85% and 6% with good XRD peak intensities were successfully grown. GaInNAs quantum wells (QWs) were then grown with reference to the nitrogen compositions measured in the GaNAs materials to obtain nitrogen compositions > 2%. The photoluminescence (PL) peak positions of the GaInNAs QWs blueshifted after annealing at 840°C and 10min. It was found that the blueshift of PL peaks are highly dependent on nitrogen compositions.

Original language	English (US)
Pages (from-to)	317-322
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	693
State	Published - 2002
Externally published	Yes
Event	GaN and Related Alloys-2001 - Boston, MA, United States Duration: Nov 26 2001 → Nov 30 2001

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{e2c4cb559b4742208be8e748105c06ad,

title = "Study of high nitrogen compositions GaNAs and GaInNAs material quality by x-ray diffraction and photoluminescence",

abstract = "GaNAs and GaInNAs growths are subjects of considerable interest due to its technological importance in long wavelength lasers emitting within the optical-fiber communication wavelength window (1.31 - 1.55 μm). We study GaNAs and GaInNAs materials growth on (100) semi-insulating GaAs substrate with high nitrogen compositions (>2%) using a solid source molecular beam epitaxy (SSMBE) system in conjunction with a RF plasma source. GaNAs layer with high nitrogen compositions of 4.85% and 6% with good XRD peak intensities were successfully grown. GaInNAs quantum wells (QWs) were then grown with reference to the nitrogen compositions measured in the GaNAs materials to obtain nitrogen compositions > 2%. The photoluminescence (PL) peak positions of the GaInNAs QWs blueshifted after annealing at 840°C and 10min. It was found that the blueshift of PL peaks are highly dependent on nitrogen compositions.",

author = "Ng, {T. K.} and Yoon, {S. F.} and Wang, {S. Z.} and Loke, {W. K.} and Fan, {W. J.}",

year = "2002",

language = "English (US)",

volume = "693",

pages = "317--322",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "GaN and Related Alloys-2001 ; Conference date: 26-11-2001 Through 30-11-2001",

}

TY - JOUR

T1 - Study of high nitrogen compositions GaNAs and GaInNAs material quality by x-ray diffraction and photoluminescence

AU - Ng, T. K.

AU - Yoon, S. F.

AU - Wang, S. Z.

AU - Loke, W. K.

AU - Fan, W. J.

PY - 2002

Y1 - 2002

N2 - GaNAs and GaInNAs growths are subjects of considerable interest due to its technological importance in long wavelength lasers emitting within the optical-fiber communication wavelength window (1.31 - 1.55 μm). We study GaNAs and GaInNAs materials growth on (100) semi-insulating GaAs substrate with high nitrogen compositions (>2%) using a solid source molecular beam epitaxy (SSMBE) system in conjunction with a RF plasma source. GaNAs layer with high nitrogen compositions of 4.85% and 6% with good XRD peak intensities were successfully grown. GaInNAs quantum wells (QWs) were then grown with reference to the nitrogen compositions measured in the GaNAs materials to obtain nitrogen compositions > 2%. The photoluminescence (PL) peak positions of the GaInNAs QWs blueshifted after annealing at 840°C and 10min. It was found that the blueshift of PL peaks are highly dependent on nitrogen compositions.

AB - GaNAs and GaInNAs growths are subjects of considerable interest due to its technological importance in long wavelength lasers emitting within the optical-fiber communication wavelength window (1.31 - 1.55 μm). We study GaNAs and GaInNAs materials growth on (100) semi-insulating GaAs substrate with high nitrogen compositions (>2%) using a solid source molecular beam epitaxy (SSMBE) system in conjunction with a RF plasma source. GaNAs layer with high nitrogen compositions of 4.85% and 6% with good XRD peak intensities were successfully grown. GaInNAs quantum wells (QWs) were then grown with reference to the nitrogen compositions measured in the GaNAs materials to obtain nitrogen compositions > 2%. The photoluminescence (PL) peak positions of the GaInNAs QWs blueshifted after annealing at 840°C and 10min. It was found that the blueshift of PL peaks are highly dependent on nitrogen compositions.

UR - http://www.scopus.com/inward/record.url?scp=0036374058&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036374058

SN - 0272-9172

VL - 693

SP - 317

EP - 322

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - GaN and Related Alloys-2001

Y2 - 26 November 2001 through 30 November 2001

ER -

Study of high nitrogen compositions GaNAs and GaInNAs material quality by x-ray diffraction and photoluminescence

Abstract

ASJC Scopus subject areas

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