@inproceedings{0c6906afdf274778ad113a70f15ae947,
title = "Study of defects in p-type layers in III-nitride laser diode structures grown by molecular beam epitaxy",
abstract = "This paper reports on the study of defects in p-type layers in III-nitride laser structures grown by molecular beam epitaxy. Characterization of the heterostructures was carried out using atomic force microscopy and transmission electron microscopy. The results show that a high density of extended defects - possibly inversion domains - exist in the p-type cladding layers of as-grown structures with either AlGaN/GaN superlattices or bulk AlGaN cladding layers. TEM analysis of operated and aged devices does not reveal any significant structural modification of the p-type material which might be the cause of deterioration in the lasing performance or failure.",
author = "Xiu Huixin and Costa, {Pedro M.F.J.} and Matthias Kauer and Smeeton, {Tim M.} and Hooper, {Stewart E.} and Jonathan Heffernan and Humphreys, {Colin J.}",
year = "2006",
language = "English (US)",
isbn = "9781604234114",
series = "Materials Research Society Symposium Proceedings",
pages = "46--52",
booktitle = "Advances in III-V Nitride Semiconductor Materials and Devices",
note = "2006 MRS Fall Meeting ; Conference date: 27-11-2006 Through 01-12-2006",
}