Studies on failure mechanism of Al fluoride oxide-AlxO yPz on microchip Al bondpads

Younan Hua; Siping Zhao; Rao Ramesh; Li Kun

doi:10.1109/SMELEC.2006.380686

Studies on failure mechanism of Al fluoride oxide-Al_xO _yP_z on microchip Al bondpads

Younan Hua^*, Siping Zhao, Rao Ramesh, Li Kun

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Al fluoride oxide on microchip Al bondpads may cause non-stick on pad (NSOP) problem during bonding process. In this study, a failure mechanism to form Al fluoride oxide-Al_xO_yF_z has been proposed. Based on the failure mechanism, F contamination on Al bondpads, it will chemically react with Al and form Al-F complex compound, such as [AlF ₆]³. [AlF₆]^3- formed may become an anode and further chemical reaction from O₂ and moisture (H ₂O) will occur at the cathode and form the new product, OH-ions, which will undergo chemical reaction with Al to form Al(OH)₃, and then become Al₂O₃. Finally, Al-F complex compound may further chemically react with Al₂O₃ to form Al fluoride oxide-Al_xO_yF_z.

Original language	English (US)
Title of host publication	ICSE 2006
Subtitle of host publication	2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages	528-532
Number of pages	5
DOIs	https://doi.org/10.1109/SMELEC.2006.380686
State	Published - 2006
Externally published	Yes
Event	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia Duration: Nov 29 2006 → Dec 1 2006

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
Country/Territory	Malaysia
City	Kuala Lumpur
Period	11/29/06 → 12/1/06

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/SMELEC.2006.380686

Cite this

Hua, Y., Zhao, S., Ramesh, R., & Kun, L. (2006). Studies on failure mechanism of Al fluoride oxide-Al_xO _yP_z on microchip Al bondpads. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 528-532). Article 4266669 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2006.380686

@inproceedings{360e484c3e974afa9ea57746f7439695,

title = "Studies on failure mechanism of Al fluoride oxide-AlxO yPz on microchip Al bondpads",

abstract = "Al fluoride oxide on microchip Al bondpads may cause non-stick on pad (NSOP) problem during bonding process. In this study, a failure mechanism to form Al fluoride oxide-AlxOyFz has been proposed. Based on the failure mechanism, F contamination on Al bondpads, it will chemically react with Al and form Al-F complex compound, such as [AlF 6]3. [AlF6]3- formed may become an anode and further chemical reaction from O2 and moisture (H 2O) will occur at the cathode and form the new product, OH-ions, which will undergo chemical reaction with Al to form Al(OH)3, and then become Al2O3. Finally, Al-F complex compound may further chemically react with Al2O3 to form Al fluoride oxide-AlxOyFz.",

author = "Younan Hua and Siping Zhao and Rao Ramesh and Li Kun",

year = "2006",

doi = "10.1109/SMELEC.2006.380686",

language = "English (US)",

isbn = "0780397312",

series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

pages = "528--532",

booktitle = "ICSE 2006",

note = "2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 ; Conference date: 29-11-2006 Through 01-12-2006",

}

Hua, Y, Zhao, S, Ramesh, R & Kun, L 2006, Studies on failure mechanism of Al fluoride oxide-Al_xO _yP_z on microchip Al bondpads. in ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings., 4266669, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, pp. 528-532, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, Malaysia, 11/29/06. https://doi.org/10.1109/SMELEC.2006.380686

Studies on failure mechanism of Al fluoride oxide-Al_xO _yP_z on microchip Al bondpads. / Hua, Younan; Zhao, Siping; Ramesh, Rao et al.
ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 528-532 4266669 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Studies on failure mechanism of Al fluoride oxide-AlxO yPz on microchip Al bondpads

AU - Hua, Younan

AU - Zhao, Siping

AU - Ramesh, Rao

AU - Kun, Li

PY - 2006

Y1 - 2006

N2 - Al fluoride oxide on microchip Al bondpads may cause non-stick on pad (NSOP) problem during bonding process. In this study, a failure mechanism to form Al fluoride oxide-AlxOyFz has been proposed. Based on the failure mechanism, F contamination on Al bondpads, it will chemically react with Al and form Al-F complex compound, such as [AlF 6]3. [AlF6]3- formed may become an anode and further chemical reaction from O2 and moisture (H 2O) will occur at the cathode and form the new product, OH-ions, which will undergo chemical reaction with Al to form Al(OH)3, and then become Al2O3. Finally, Al-F complex compound may further chemically react with Al2O3 to form Al fluoride oxide-AlxOyFz.

AB - Al fluoride oxide on microchip Al bondpads may cause non-stick on pad (NSOP) problem during bonding process. In this study, a failure mechanism to form Al fluoride oxide-AlxOyFz has been proposed. Based on the failure mechanism, F contamination on Al bondpads, it will chemically react with Al and form Al-F complex compound, such as [AlF 6]3. [AlF6]3- formed may become an anode and further chemical reaction from O2 and moisture (H 2O) will occur at the cathode and form the new product, OH-ions, which will undergo chemical reaction with Al to form Al(OH)3, and then become Al2O3. Finally, Al-F complex compound may further chemically react with Al2O3 to form Al fluoride oxide-AlxOyFz.

UR - http://www.scopus.com/inward/record.url?scp=35148885308&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2006.380686

DO - 10.1109/SMELEC.2006.380686

M3 - Conference contribution

AN - SCOPUS:35148885308

SN - 0780397312

SN - 9780780397316

T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

SP - 528

EP - 532

BT - ICSE 2006

T2 - 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006

Y2 - 29 November 2006 through 1 December 2006

ER -