TY - GEN
T1 - Structural, optical, and electrical properties of silicon nanowires for solar cells
AU - Stelzner, Thomas
AU - Sivakov, Vladimir A.
AU - Berger, Andreas
AU - Hoffmann, Björn
AU - De Wolf, Stefaan
AU - Ballif, Christophe
AU - Zhang, Dongfeng
AU - Michler, Johann
AU - Christiansen, Silke H.
PY - 2010
Y1 - 2010
N2 - We investigated Si nanowires (SiNWs) fabricated by wet etching and chemical vapor deposition (CVD), and core-shell structures, formed by depositing silicon layers around the SiNWs, with respect to their crystallinity, the doping level, and the influence of surface passivation on carrier lifetime. The effects expected to be critical to improve the performance of nanowire-based solar cells are discussed.
AB - We investigated Si nanowires (SiNWs) fabricated by wet etching and chemical vapor deposition (CVD), and core-shell structures, formed by depositing silicon layers around the SiNWs, with respect to their crystallinity, the doping level, and the influence of surface passivation on carrier lifetime. The effects expected to be critical to improve the performance of nanowire-based solar cells are discussed.
UR - http://www.scopus.com/inward/record.url?scp=77951661119&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424682
DO - 10.1109/INEC.2010.5424682
M3 - Conference contribution
AN - SCOPUS:77951661119
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 275
EP - 276
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -