Structural evolution in Ge                         +                          implantation amorphous Si

J. H. He; W. W. Wu; H. H. Lin; S. L. Cheng; Y. L. Chueh; L. J. Chou; L. J. Chen

doi:10.1016/S0169-4332(03)00094-1

Structural evolution in Ge ⁺ implantation amorphous Si

J. H. He, W. W. Wu, H. H. Lin, S. L. Cheng, Y. L. Chueh, L. J. Chou, L. J. Chen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The structural evolution in Ge ⁺ implantation amorphous Si has been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function (ACF) analysis. Si(0 0 1) wafers were implanted with 5 keV Ge ⁺ to a dose of 5 × 10 ¹⁵ ions/cm ² . A high density of embedded nanocrystallites was found to be present in as-implanted amorphous Si. After 350 °C annealing, the density of nanocrystallites was found to decrease, but increase after annealing at 400 °C or higher temperatures. The observation indicated that the implanted silicon became more randomized upon annealing up to 350 °C. The results are discussed in terms of energy variation in the system.

Original language	English (US)
Pages (from-to)	325-328
Number of pages	4
Journal	Applied Surface Science
Volume	212-213
Issue number	SPEC.
DOIs	https://doi.org/10.1016/S0169-4332(03)00094-1
State	Published - May 15 2003
Externally published	Yes

Keywords

Auto-correlation function
High-resolution TEM
Ion implantation
Nanocrystallite
Preamorphization

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(03)00094-1

Cite this

@article{869010a96ed5441098b9c660f3969e33,

title = " Structural evolution in Ge + implantation amorphous Si ",

abstract = " The structural evolution in Ge + implantation amorphous Si has been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function (ACF) analysis. Si(0 0 1) wafers were implanted with 5 keV Ge + to a dose of 5 × 10 15 ions/cm 2 . A high density of embedded nanocrystallites was found to be present in as-implanted amorphous Si. After 350 °C annealing, the density of nanocrystallites was found to decrease, but increase after annealing at 400 °C or higher temperatures. The observation indicated that the implanted silicon became more randomized upon annealing up to 350 °C. The results are discussed in terms of energy variation in the system.",

keywords = "Auto-correlation function, High-resolution TEM, Ion implantation, Nanocrystallite, Preamorphization",

author = "He, {J. H.} and Wu, {W. W.} and Lin, {H. H.} and Cheng, {S. L.} and Chueh, {Y. L.} and Chou, {L. J.} and Chen, {L. J.}",

year = "2003",

month = may,

day = "15",

doi = "10.1016/S0169-4332(03)00094-1",

language = "English (US)",

volume = "212-213",

pages = "325--328",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "SPEC.",

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TY - JOUR

T1 - Structural evolution in Ge + implantation amorphous Si

AU - He, J. H.

AU - Wu, W. W.

AU - Lin, H. H.

AU - Cheng, S. L.

AU - Chueh, Y. L.

AU - Chou, L. J.

AU - Chen, L. J.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - The structural evolution in Ge + implantation amorphous Si has been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function (ACF) analysis. Si(0 0 1) wafers were implanted with 5 keV Ge + to a dose of 5 × 10 15 ions/cm 2 . A high density of embedded nanocrystallites was found to be present in as-implanted amorphous Si. After 350 °C annealing, the density of nanocrystallites was found to decrease, but increase after annealing at 400 °C or higher temperatures. The observation indicated that the implanted silicon became more randomized upon annealing up to 350 °C. The results are discussed in terms of energy variation in the system.

AB - The structural evolution in Ge + implantation amorphous Si has been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function (ACF) analysis. Si(0 0 1) wafers were implanted with 5 keV Ge + to a dose of 5 × 10 15 ions/cm 2 . A high density of embedded nanocrystallites was found to be present in as-implanted amorphous Si. After 350 °C annealing, the density of nanocrystallites was found to decrease, but increase after annealing at 400 °C or higher temperatures. The observation indicated that the implanted silicon became more randomized upon annealing up to 350 °C. The results are discussed in terms of energy variation in the system.

KW - Auto-correlation function

KW - High-resolution TEM

KW - Ion implantation

KW - Nanocrystallite

KW - Preamorphization

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U2 - 10.1016/S0169-4332(03)00094-1

DO - 10.1016/S0169-4332(03)00094-1

M3 - Article

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SN - 0169-4332

VL - 212-213

SP - 325

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JO - Applied Surface Science

JF - Applied Surface Science

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