Structural and optical analyses for InGaN-based red micro-LED

Fu-He Hsiao; Wen-Chien Miao; Yu-Heng Hong; Hsin Chiang; I-Hung Ho; Kai-Bo Liang; Daisuke Iida; Chun-Liang Lin; Hyeyoung Ahn; Kazuhiro Ohkawa; Chiao-Yun Chang; Hao-Chung Kuo

doi:10.1186/s11671-023-03853-1

Structural and optical analyses for InGaN-based red micro-LED

Fu-He Hsiao, Wen-Chien Miao, Yu-Heng Hong, Hsin Chiang, I-Hung Ho, Kai-Bo Liang, Daisuke Iida, Chun-Liang Lin, Hyeyoung Ahn, Kazuhiro Ohkawa, Chiao-Yun Chang, Hao-Chung Kuo

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4 Scopus citations

Abstract

This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.

Original language	English (US)
Journal	Discover Nano
Volume	18
Issue number	1
DOIs	https://doi.org/10.1186/s11671-023-03853-1
State	Published - May 25 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-05-29
Acknowledgements: This research was funded by the Ministry of Science and Technology in Taiwan (Grant Nos. MOST 111-2124-M-A49-004-). The authors would like to gratefully acknowledge Wei-Bin Lee from the Hon Hai Research Institute.

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10.1186/s11671-023-03853-1

https://repository.kaust.edu.sa/bitstream/10754/692117/1/240%202023%20Discover%20Nano%20Hsiao.pdf

Cite this

@article{7e5d33635fc8437580191e4790654898,

title = "Structural and optical analyses for InGaN-based red micro-LED",

abstract = "This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.",

author = "Fu-He Hsiao and Wen-Chien Miao and Yu-Heng Hong and Hsin Chiang and I-Hung Ho and Kai-Bo Liang and Daisuke Iida and Chun-Liang Lin and Hyeyoung Ahn and Kazuhiro Ohkawa and Chiao-Yun Chang and Hao-Chung Kuo",

note = "KAUST Repository Item: Exported on 2023-05-29 Acknowledgements: This research was funded by the Ministry of Science and Technology in Taiwan (Grant Nos. MOST 111-2124-M-A49-004-). The authors would like to gratefully acknowledge Wei-Bin Lee from the Hon Hai Research Institute.",

year = "2023",

month = may,

day = "25",

doi = "10.1186/s11671-023-03853-1",

language = "English (US)",

volume = "18",

journal = "Discover Nano",

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TY - JOUR

T1 - Structural and optical analyses for InGaN-based red micro-LED

AU - Hsiao, Fu-He

AU - Miao, Wen-Chien

AU - Hong, Yu-Heng

AU - Chiang, Hsin

AU - Ho, I-Hung

AU - Liang, Kai-Bo

AU - Iida, Daisuke

AU - Lin, Chun-Liang

AU - Ahn, Hyeyoung

AU - Ohkawa, Kazuhiro

AU - Chang, Chiao-Yun

AU - Kuo, Hao-Chung

N1 - KAUST Repository Item: Exported on 2023-05-29 Acknowledgements: This research was funded by the Ministry of Science and Technology in Taiwan (Grant Nos. MOST 111-2124-M-A49-004-). The authors would like to gratefully acknowledge Wei-Bin Lee from the Hon Hai Research Institute.

PY - 2023/5/25

Y1 - 2023/5/25

N2 - This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.

AB - This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.

UR - http://hdl.handle.net/10754/692117

UR - https://link.springer.com/10.1186/s11671-023-03853-1

U2 - 10.1186/s11671-023-03853-1

DO - 10.1186/s11671-023-03853-1

M3 - Article

C2 - 37382747

SN - 2731-9229

VL - 18

JO - Discover Nano

JF - Discover Nano

IS - 1

ER -

Structural and optical analyses for InGaN-based red micro-LED

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