Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route

L. A. García-Cerda; B. A. Puente-Urbina; Manuel Angel Quevedo Quevedo-López; Bruce E. Gnade; Leonardo Aurelio Baldenegro-Pérez; Husam N. Alshareef; Martín Adelaido Hernández-Landaverde

doi:10.4028/www.scientific.net/MSF.644.113

Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route

L. A. García-Cerda, B. A. Puente-Urbina, Manuel Angel Quevedo Quevedo-López, Bruce E. Gnade, Leonardo Aurelio Baldenegro-Pérez, Husam N. Alshareef, Martín Adelaido Hernández-Landaverde

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm. © (2010) Trans Tech Publications.

Original language	English (US)
Title of host publication	Materials Science Forum
Publisher	Trans Tech Publications
Pages	113-116
Number of pages	4
ISBN (Print)	087849281X; 9780878492817
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.644.113
State	Published - Mar 2010

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García-Cerda, L. A., Puente-Urbina, B. A., Quevedo-López, M. A. Q., Gnade, B. E., Baldenegro-Pérez, L. A., Alshareef, H. N., & Hernández-Landaverde, M. A. (2010). Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route. In Materials Science Forum (pp. 113-116). Trans Tech Publications. https://doi.org/10.4028/www.scientific.net/MSF.644.113

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title = "Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route",

abstract = "In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm. {\textcopyright} (2010) Trans Tech Publications.",

author = "Garc{\'i}a-Cerda, {L. A.} and Puente-Urbina, {B. A.} and Quevedo-L{\'o}pez, {Manuel Angel Quevedo} and Gnade, {Bruce E.} and Baldenegro-P{\'e}rez, {Leonardo Aurelio} and Alshareef, {Husam N.} and Hern{\'a}ndez-Landaverde, {Mart{\'i}n Adelaido}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2010",

month = mar,

doi = "10.4028/www.scientific.net/MSF.644.113",

language = "English (US)",

isbn = "087849281X; 9780878492817",

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T1 - Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route

AU - García-Cerda, L. A.

AU - Puente-Urbina, B. A.

AU - Quevedo-López, Manuel Angel Quevedo

AU - Gnade, Bruce E.

AU - Baldenegro-Pérez, Leonardo Aurelio

AU - Alshareef, Husam N.

AU - Hernández-Landaverde, Martín Adelaido

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2010/3

Y1 - 2010/3

N2 - In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm. © (2010) Trans Tech Publications.

AB - In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm. © (2010) Trans Tech Publications.

UR - http://hdl.handle.net/10754/564273

UR - https://www.scientific.net/MSF.644.113

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U2 - 10.4028/www.scientific.net/MSF.644.113

DO - 10.4028/www.scientific.net/MSF.644.113

M3 - Conference contribution

SN - 087849281X; 9780878492817

SP - 113

EP - 116

BT - Materials Science Forum

PB - Trans Tech Publications

ER -

Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route

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