Structural and magnetic properties of Fe-Ge layer produced by Fe ion-implantation into germanium

R. Venugopal; B. Sundaravel; I. H. Wilson; F. W. Wang; X. X. Zhang

doi:10.1063/1.1427135

Structural and magnetic properties of Fe-Ge layer produced by Fe ion-implantation into germanium

R. Venugopal^*, B. Sundaravel, I. H. Wilson, F. W. Wang, X. X. Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Fe ions were implanted into Ge (110) using a metal vapor vacuum arc ion source. The samples were characterized by Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and superconducting quantum interference device magnetometry. The crystalline quality of the implanted layer was identified by RBS random/channeling measurements. The depth profile of the implanted Fe ions was obtained by AES. Low dose implantation causes formation of Fe-Ge precipitates whereas high dose implantation causes formation of Fe precipitates in the implanted layer as confirmed by TEM and XPS measurements. Magnetic measurements show the superparamagnetism of the Fe and Fe-Ge clusters at high temperatures.

Original language	English (US)
Pages (from-to)	1410-1416
Number of pages	7
Journal	Journal of Applied Physics
Volume	91
Issue number	3
DOIs	https://doi.org/10.1063/1.1427135
State	Published - Feb 1 2002
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Structural and magnetic properties of Fe-Ge layer produced by Fe ion-implantation into germanium",

abstract = "Fe ions were implanted into Ge (110) using a metal vapor vacuum arc ion source. The samples were characterized by Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and superconducting quantum interference device magnetometry. The crystalline quality of the implanted layer was identified by RBS random/channeling measurements. The depth profile of the implanted Fe ions was obtained by AES. Low dose implantation causes formation of Fe-Ge precipitates whereas high dose implantation causes formation of Fe precipitates in the implanted layer as confirmed by TEM and XPS measurements. Magnetic measurements show the superparamagnetism of the Fe and Fe-Ge clusters at high temperatures.",

author = "R. Venugopal and B. Sundaravel and Wilson, {I. H.} and Wang, {F. W.} and Zhang, {X. X.}",

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T1 - Structural and magnetic properties of Fe-Ge layer produced by Fe ion-implantation into germanium

AU - Venugopal, R.

AU - Sundaravel, B.

AU - Wilson, I. H.

AU - Wang, F. W.

AU - Zhang, X. X.

PY - 2002/2/1

Y1 - 2002/2/1

N2 - Fe ions were implanted into Ge (110) using a metal vapor vacuum arc ion source. The samples were characterized by Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and superconducting quantum interference device magnetometry. The crystalline quality of the implanted layer was identified by RBS random/channeling measurements. The depth profile of the implanted Fe ions was obtained by AES. Low dose implantation causes formation of Fe-Ge precipitates whereas high dose implantation causes formation of Fe precipitates in the implanted layer as confirmed by TEM and XPS measurements. Magnetic measurements show the superparamagnetism of the Fe and Fe-Ge clusters at high temperatures.

AB - Fe ions were implanted into Ge (110) using a metal vapor vacuum arc ion source. The samples were characterized by Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and superconducting quantum interference device magnetometry. The crystalline quality of the implanted layer was identified by RBS random/channeling measurements. The depth profile of the implanted Fe ions was obtained by AES. Low dose implantation causes formation of Fe-Ge precipitates whereas high dose implantation causes formation of Fe precipitates in the implanted layer as confirmed by TEM and XPS measurements. Magnetic measurements show the superparamagnetism of the Fe and Fe-Ge clusters at high temperatures.

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DO - 10.1063/1.1427135

M3 - Article

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Structural and magnetic properties of Fe-Ge layer produced by Fe ion-implantation into germanium

Abstract

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