Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN

Ryota Senda; Tetsuya Matsubara; Daisuke Iida; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki

doi:10.1143/APEX.2.061004

Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN

Ryota Senda, Tetsuya Matsubara, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We fabricated GaInN/GaN multiple quantum wells (MQWs) on a high-crystalline-quality thick m-plane GaInN underlying layer, and the integral photoluminescence (PL) intensity was compared with that of the same GaInN/GaN MQWs on a high-crystalline-quality m-plane GaN underlying layer. The light emission wavelengths from the MQWs were violet (̃396 nm), blue (̃450 nm), and green (̃535 nm). The integral PL intensities obtained from the GaInN/GaN violet, blue, and green MQWs on the high-crystalline-quality thick GaInN underlying layer were 1.1, 1.5, and 2.1 times higher than these of the MQWs on the m-plane GaN underlying layer, respectively. ©2009 The Japan Society of Applied Physics.

Original language	English (US)
Journal	APPLIED PHYSICS EXPRESS
Volume	2
Issue number	6
DOIs	https://doi.org/10.1143/APEX.2.061004
State	Published - Jun 1 2009
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

General Physics and Astronomy
General Engineering

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@article{448b8ce83c1d4544af8dfb87be09e976,

title = "Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN",

abstract = "We fabricated GaInN/GaN multiple quantum wells (MQWs) on a high-crystalline-quality thick m-plane GaInN underlying layer, and the integral photoluminescence (PL) intensity was compared with that of the same GaInN/GaN MQWs on a high-crystalline-quality m-plane GaN underlying layer. The light emission wavelengths from the MQWs were violet {\~(}396 nm), blue {\~(}450 nm), and green {\~(}535 nm). The integral PL intensities obtained from the GaInN/GaN violet, blue, and green MQWs on the high-crystalline-quality thick GaInN underlying layer were 1.1, 1.5, and 2.1 times higher than these of the MQWs on the m-plane GaN underlying layer, respectively. {\textcopyright}2009 The Japan Society of Applied Physics.",

author = "Ryota Senda and Tetsuya Matsubara and Daisuke Iida and Motoaki Iwaya and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2009",

month = jun,

day = "1",

doi = "10.1143/APEX.2.061004",

language = "English (US)",

volume = "2",

journal = "APPLIED PHYSICS EXPRESS",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN

AU - Senda, Ryota

AU - Matsubara, Tetsuya

AU - Iida, Daisuke

AU - Iwaya, Motoaki

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2009/6/1

Y1 - 2009/6/1

N2 - We fabricated GaInN/GaN multiple quantum wells (MQWs) on a high-crystalline-quality thick m-plane GaInN underlying layer, and the integral photoluminescence (PL) intensity was compared with that of the same GaInN/GaN MQWs on a high-crystalline-quality m-plane GaN underlying layer. The light emission wavelengths from the MQWs were violet (̃396 nm), blue (̃450 nm), and green (̃535 nm). The integral PL intensities obtained from the GaInN/GaN violet, blue, and green MQWs on the high-crystalline-quality thick GaInN underlying layer were 1.1, 1.5, and 2.1 times higher than these of the MQWs on the m-plane GaN underlying layer, respectively. ©2009 The Japan Society of Applied Physics.

AB - We fabricated GaInN/GaN multiple quantum wells (MQWs) on a high-crystalline-quality thick m-plane GaInN underlying layer, and the integral photoluminescence (PL) intensity was compared with that of the same GaInN/GaN MQWs on a high-crystalline-quality m-plane GaN underlying layer. The light emission wavelengths from the MQWs were violet (̃396 nm), blue (̃450 nm), and green (̃535 nm). The integral PL intensities obtained from the GaInN/GaN violet, blue, and green MQWs on the high-crystalline-quality thick GaInN underlying layer were 1.1, 1.5, and 2.1 times higher than these of the MQWs on the m-plane GaN underlying layer, respectively. ©2009 The Japan Society of Applied Physics.

UR - https://iopscience.iop.org/article/10.1143/APEX.2.061004

UR - http://www.scopus.com/inward/record.url?scp=67949097441&partnerID=8YFLogxK

U2 - 10.1143/APEX.2.061004

DO - 10.1143/APEX.2.061004

M3 - Article

SN - 1882-0778

VL - 2

JO - APPLIED PHYSICS EXPRESS

JF - APPLIED PHYSICS EXPRESS

IS - 6

ER -

Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN

Abstract

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ASJC Scopus subject areas

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