Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

J. P. Liu; K. Li; S. M. Pandey; F. L. Benistant; A. See; M. S. Zhou; L. C. Hsia; Ruud Schampers; Dmitri O. Klenov

doi:10.1063/1.3040323

Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

J. P. Liu, K. Li, S. M. Pandey, F. L. Benistant, A. See, M. S. Zhou, L. C. Hsia, Ruud Schampers, Dmitri O. Klenov

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

We report on the channel strain relaxation in transistors with embedded silicon germanium layer selectively grown in source and drain areas on recessed Si(001). Nanobeam electron diffraction is used to characterize the local strain in the device channel. Our results show that strain is reduced in the device channel regions after implantation and thermal anneal.

Original language	English (US)
Article number	221912
Journal	Applied Physics Letters
Volume	93
Issue number	22
DOIs	https://doi.org/10.1063/1.3040323
State	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3040323

Cite this

@article{879f7ca27f0242e89cd6de5847af36b7,

title = "Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain",

abstract = "We report on the channel strain relaxation in transistors with embedded silicon germanium layer selectively grown in source and drain areas on recessed Si(001). Nanobeam electron diffraction is used to characterize the local strain in the device channel. Our results show that strain is reduced in the device channel regions after implantation and thermal anneal.",

author = "Liu, {J. P.} and K. Li and Pandey, {S. M.} and Benistant, {F. L.} and A. See and Zhou, {M. S.} and Hsia, {L. C.} and Ruud Schampers and Klenov, {Dmitri O.}",

year = "2008",

doi = "10.1063/1.3040323",

language = "English (US)",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "22",

}

TY - JOUR

T1 - Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

AU - Liu, J. P.

AU - Li, K.

AU - Pandey, S. M.

AU - Benistant, F. L.

AU - See, A.

AU - Zhou, M. S.

AU - Hsia, L. C.

AU - Schampers, Ruud

AU - Klenov, Dmitri O.

PY - 2008

Y1 - 2008

N2 - We report on the channel strain relaxation in transistors with embedded silicon germanium layer selectively grown in source and drain areas on recessed Si(001). Nanobeam electron diffraction is used to characterize the local strain in the device channel. Our results show that strain is reduced in the device channel regions after implantation and thermal anneal.

AB - We report on the channel strain relaxation in transistors with embedded silicon germanium layer selectively grown in source and drain areas on recessed Si(001). Nanobeam electron diffraction is used to characterize the local strain in the device channel. Our results show that strain is reduced in the device channel regions after implantation and thermal anneal.

UR - http://www.scopus.com/inward/record.url?scp=57349088158&partnerID=8YFLogxK

U2 - 10.1063/1.3040323

DO - 10.1063/1.3040323

M3 - Article

AN - SCOPUS:57349088158

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 221912

ER -

Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this