We report on the channel strain relaxation in transistors with embedded silicon germanium layer selectively grown in source and drain areas on recessed Si(001). Nanobeam electron diffraction is used to characterize the local strain in the device channel. Our results show that strain is reduced in the device channel regions after implantation and thermal anneal.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Dec 12 2008|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)