Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

J. P. Liu, Kun Li, S. M. Pandey, F. L. Benistant, A. See, M. S. Zhou, L. C. Hsia, Ruud Schampers, Dmitri O. Klenov

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32 Scopus citations


We report on the channel strain relaxation in transistors with embedded silicon germanium layer selectively grown in source and drain areas on recessed Si(001). Nanobeam electron diffraction is used to characterize the local strain in the device channel. Our results show that strain is reduced in the device channel regions after implantation and thermal anneal.

Original languageEnglish (US)
Article number221912
JournalApplied Physics Letters
Issue number22
StatePublished - Dec 12 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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