Strain-induced changes to the electronic structure of germanium

H. A. Tahini; Alexander I. Chroneos; Robin W. Grimes; Udo Schwingenschlögl; Athanasios Dimoulas Dimoulas

doi:10.1088/0953-8984/24/19/195802

Strain-induced changes to the electronic structure of germanium

H. A. Tahini, Alexander I. Chroneos, Robin W. Grimes, Udo Schwingenschlögl, Athanasios Dimoulas Dimoulas

Research output: Contribution to journal › Article › peer-review

86 Scopus citations

Abstract

Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.

Original language	English (US)
Pages (from-to)	195802
Journal	Journal of Physics: Condensed Matter
Volume	24
Issue number	19
DOIs	https://doi.org/10.1088/0953-8984/24/19/195802
State	Published - Apr 17 2012

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This publication was based on research supported by King Abdullah University for Science and Technology (KAUST). HT is grateful to Samuel Murphy (ICL) for useful discussions. Computing resources were provided by the HPC facility at ICL (www3.imperial.ac.uk/ict/services/highperformancecomputing). AC and AD acknowledge financial support from the EU FP7-PEOPLE-2010-IEF project REACT-273631.

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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Cite this

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title = "Strain-induced changes to the electronic structure of germanium",

abstract = "Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. {\textcopyright} 2012 IOP Publishing Ltd.",

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AU - Tahini, H. A.

AU - Chroneos, Alexander I.

AU - Grimes, Robin W.

AU - Schwingenschlögl, Udo

AU - Dimoulas, Athanasios Dimoulas

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This publication was based on research supported by King Abdullah University for Science and Technology (KAUST). HT is grateful to Samuel Murphy (ICL) for useful discussions. Computing resources were provided by the HPC facility at ICL (www3.imperial.ac.uk/ict/services/highperformancecomputing). AC and AD acknowledge financial support from the EU FP7-PEOPLE-2010-IEF project REACT-273631.

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N2 - Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.

AB - Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.

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JO - Journal of Physics: Condensed Matter

JF - Journal of Physics: Condensed Matter

IS - 19

ER -

Strain-induced changes to the electronic structure of germanium

Abstract

Bibliographical note

ASJC Scopus subject areas

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