Strain-induced changes to the electronic structure of germanium

H. A. Tahini, Alexander I. Chroneos, Robin W. Grimes, Udo Schwingenschlögl, Athanasios Dimoulas Dimoulas

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84 Scopus citations

Abstract

Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.
Original languageEnglish (US)
Pages (from-to)195802
JournalJournal of Physics: Condensed Matter
Volume24
Issue number19
DOIs
StatePublished - Apr 17 2012

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This publication was based on research supported by King Abdullah University for Science and Technology (KAUST). HT is grateful to Samuel Murphy (ICL) for useful discussions. Computing resources were provided by the HPC facility at ICL (www3.imperial.ac.uk/ict/services/highperformancecomputing). AC and AD acknowledge financial support from the EU FP7-PEOPLE-2010-IEF project REACT-273631.

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics

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