Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions

Chendong Zhang; Ming-yang Li; Jerry Tersoff; Yimo Han; Yushan Su; Lain-Jong Li; David A. Muller; Chih-Kang Shih

doi:10.1038/s41565-017-0022-x

Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions

Chendong Zhang, Ming-yang Li, Jerry Tersoff, Yimo Han, Yushan Su, Lain-Jong Li, David A. Muller, Chih-Kang Shih

Research output: Contribution to journal › Article › peer-review

209 Scopus citations

Abstract

Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p–n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2–MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2–MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2–MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.

Original language	English (US)
Pages (from-to)	152-158
Number of pages	7
Journal	Nature Nanotechnology
Volume	13
Issue number	2
DOIs	https://doi.org/10.1038/s41565-017-0022-x
State	Published - Jan 15 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This research was supported with grants from the Welch Foundation (F-1672), the US National Science Foundation (NSF) (DMR-1306878, EFMA-1542747) and the Materials Research Science and Engineering Center (DMR-1720595). L.J.L. acknowledges support from KAUST (Saudi Arabia), MOST and TCECM, Academia Sinica (Taiwan) and AOARD FA23861510001 (USA). C.Z acknowledges support from the National Natural Science Foundation of China (Grant No. 11774268). Y.S.S acknowledges support from the Yan Jici Talent Students Program. This work made use of the electron microscopy facility of the Cornell Center for Materials Research with support from the NSF (DMR-1719875 and DMR-1429155).

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title = "Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions",

abstract = "Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p–n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2–MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2–MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moir{\'e} pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2–MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.",

author = "Chendong Zhang and Ming-yang Li and Jerry Tersoff and Yimo Han and Yushan Su and Lain-Jong Li and Muller, {David A.} and Chih-Kang Shih",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This research was supported with grants from the Welch Foundation (F-1672), the US National Science Foundation (NSF) (DMR-1306878, EFMA-1542747) and the Materials Research Science and Engineering Center (DMR-1720595). L.J.L. acknowledges support from KAUST (Saudi Arabia), MOST and TCECM, Academia Sinica (Taiwan) and AOARD FA23861510001 (USA). C.Z acknowledges support from the National Natural Science Foundation of China (Grant No. 11774268). Y.S.S acknowledges support from the Yan Jici Talent Students Program. This work made use of the electron microscopy facility of the Cornell Center for Materials Research with support from the NSF (DMR-1719875 and DMR-1429155).",

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T1 - Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions

AU - Zhang, Chendong

AU - Li, Ming-yang

AU - Tersoff, Jerry

AU - Han, Yimo

AU - Su, Yushan

AU - Li, Lain-Jong

AU - Muller, David A.

AU - Shih, Chih-Kang

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This research was supported with grants from the Welch Foundation (F-1672), the US National Science Foundation (NSF) (DMR-1306878, EFMA-1542747) and the Materials Research Science and Engineering Center (DMR-1720595). L.J.L. acknowledges support from KAUST (Saudi Arabia), MOST and TCECM, Academia Sinica (Taiwan) and AOARD FA23861510001 (USA). C.Z acknowledges support from the National Natural Science Foundation of China (Grant No. 11774268). Y.S.S acknowledges support from the Yan Jici Talent Students Program. This work made use of the electron microscopy facility of the Cornell Center for Materials Research with support from the NSF (DMR-1719875 and DMR-1429155).

PY - 2018/1/15

Y1 - 2018/1/15

N2 - Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p–n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2–MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2–MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2–MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.

AB - Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p–n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2–MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2–MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2–MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.

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JO - Nature Nanotechnology

JF - Nature Nanotechnology

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ER -

Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions

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