Strain compensated superlattices on m-plane gallium nitride by ammonia molecular beam epitaxy

Micha N. Fireman, Bastien Bonef, Erin C. Young, Nishant Nookala, Mikhail A. Belkin, James S. Speck

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


The results of tensile strained AlN/GaN, AlGaN/GaN, and compressive strained InGaN/GaN superlattices (SLs) grown by Ammonia MBE (NH3-MBE) are presented. A combination of atom probe tomography and high-resolution X-ray diffraction confirms that periodic heterostructures of high crystallographic quality are achieved. Strain induced misfit dislocations (MDs), however, are revealed by cathodoluminescence (CL) of the strained AlN/GaN, AlGaN/GaN, and InGaN/GaN structures. MDs in the active region of a device are a severe problem as they act as non-radiative charge recombination centers, affecting the reliability and efficiency of the device. Strain compensated SL structures are subsequently developed, composed of alternating layers of tensile strained AlGaN and compressively strained InGaN. CL reveals the absence of MDs in such structures, demonstrating that strain compensation offers a viable route towards MD free active regions in III-Nitride SL based devices.
Original languageEnglish (US)
Pages (from-to)075105
Issue number7
StatePublished - Aug 21 2017
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-03
Acknowledgements: The work at the UCSB was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

  • General Physics and Astronomy


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