STEM study of interfacial reaction at HfxAl1-xO y/Si interfaces

J. Y. Dai; K. Li; P. F. Lee; X. Zhao; S. Redkar

doi:10.1016/j.tsf.2004.05.139

STEM study of interfacial reaction at Hf_xAl_1-xO _y/Si interfaces

J. Y. Dai^*, K. Li, P. F. Lee, X. Zhao, S. Redkar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Hf_x(Al_1-xO_y thin films were deposited by pulsed-laser deposition (PLD) on p-type (001) Si substrates. Interfacial reaction at Hf_xAl_1-xO_y/Si interfaces was studied by scanning transmission electron microscopy (STEM) using high-angle annular dark field imaging technique and the energy dispersive X-ray (EDX) line scan analysis. The results showed that the interfacial reaction is due to Hf diffusion into the Si substrate forming Hf suicide. The presence of Al in the Hf_xAl_1-xO_y films was found to be responsible for the Hf suicide formation and it showed that increasing of Al content in the films reduced the interfacial reaction. Therefore, high-quality Hf _xAl_1-xO_y films possessing a reaction-free interface with Si may be obtained by optimizing the growth condition.

Original language	English (US)
Pages (from-to)	114-117
Number of pages	4
Journal	Thin Solid Films
Volume	462-463
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2004.05.139
State	Published - Sep 2004
Externally published	Yes

Keywords

HfAlO
High-k gate dielectric
Interfacial structure
STEM

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.tsf.2004.05.139

Cite this

@article{3e60180d19cf410fb84204127d51cb05,

title = "STEM study of interfacial reaction at HfxAl1-xO y/Si interfaces",

abstract = "Hfx(Al1-xOy thin films were deposited by pulsed-laser deposition (PLD) on p-type (001) Si substrates. Interfacial reaction at HfxAl1-xOy/Si interfaces was studied by scanning transmission electron microscopy (STEM) using high-angle annular dark field imaging technique and the energy dispersive X-ray (EDX) line scan analysis. The results showed that the interfacial reaction is due to Hf diffusion into the Si substrate forming Hf suicide. The presence of Al in the HfxAl1-xOy films was found to be responsible for the Hf suicide formation and it showed that increasing of Al content in the films reduced the interfacial reaction. Therefore, high-quality Hf xAl1-xOy films possessing a reaction-free interface with Si may be obtained by optimizing the growth condition.",

keywords = "HfAlO, High-k gate dielectric, Interfacial structure, STEM",

author = "Dai, {J. Y.} and K. Li and Lee, {P. F.} and X. Zhao and S. Redkar",

year = "2004",

month = sep,

doi = "10.1016/j.tsf.2004.05.139",

language = "English (US)",

volume = "462-463",

pages = "114--117",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - STEM study of interfacial reaction at HfxAl1-xO y/Si interfaces

AU - Dai, J. Y.

AU - Li, K.

AU - Lee, P. F.

AU - Zhao, X.

AU - Redkar, S.

PY - 2004/9

Y1 - 2004/9

N2 - Hfx(Al1-xOy thin films were deposited by pulsed-laser deposition (PLD) on p-type (001) Si substrates. Interfacial reaction at HfxAl1-xOy/Si interfaces was studied by scanning transmission electron microscopy (STEM) using high-angle annular dark field imaging technique and the energy dispersive X-ray (EDX) line scan analysis. The results showed that the interfacial reaction is due to Hf diffusion into the Si substrate forming Hf suicide. The presence of Al in the HfxAl1-xOy films was found to be responsible for the Hf suicide formation and it showed that increasing of Al content in the films reduced the interfacial reaction. Therefore, high-quality Hf xAl1-xOy films possessing a reaction-free interface with Si may be obtained by optimizing the growth condition.

AB - Hfx(Al1-xOy thin films were deposited by pulsed-laser deposition (PLD) on p-type (001) Si substrates. Interfacial reaction at HfxAl1-xOy/Si interfaces was studied by scanning transmission electron microscopy (STEM) using high-angle annular dark field imaging technique and the energy dispersive X-ray (EDX) line scan analysis. The results showed that the interfacial reaction is due to Hf diffusion into the Si substrate forming Hf suicide. The presence of Al in the HfxAl1-xOy films was found to be responsible for the Hf suicide formation and it showed that increasing of Al content in the films reduced the interfacial reaction. Therefore, high-quality Hf xAl1-xOy films possessing a reaction-free interface with Si may be obtained by optimizing the growth condition.

KW - HfAlO

KW - High-k gate dielectric

KW - Interfacial structure

KW - STEM

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