Steady-state Simulation of Semiconductor Devices using Discontinuous Galerkin Methods

Liang Chen, Hakan Bagci

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


Design of modern nanostructured semiconductor devices often calls for simulation tools capable of modeling arbitrarily-shaped multiscale geometries. In this work, to this end, a discontinuous Galerkin (DG) method-based framework is developed to simulate steady-state response of semiconductor devices. The proposed framework solves a system of Poisson equation (in electric potential) and stationary drift-diffusion equations (in charge densities), which are nonlinearly coupled via the drift current and the charge distribution. This system is “decoupled” and “linearized” using the Gummel method and the resulting equations are discretized using a local DG scheme. The proposed framework is used to simulate geometrically intricate semiconductor devices with realistic models of mobility and recombination rate. Its accuracy is demonstrated by comparing the results to those obtained by the finite volume and finite element methods implemented in a commercial software package.
Original languageEnglish (US)
Pages (from-to)16203-16215
Number of pages13
JournalIEEE Access
StatePublished - 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): 2016-CRG5-2953
Acknowledgements: The research reported in this publication is supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No 2016-CRG5-2953. Furthermore, the authors would like to thank the KAUST Supercomputing Laboratory (KSL) for providing the required computational resources.


Dive into the research topics of 'Steady-state Simulation of Semiconductor Devices using Discontinuous Galerkin Methods'. Together they form a unique fingerprint.

Cite this