Statistically Inspired Passivity Preserving Model Order Reduction

Namra Akram, Mehboob Alam, Rashida Hussain, Yehia Mahmoud Massoud

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The continuous scaling of the on-chip devices and interconnects increases the complexity of the design space and becomes a crucial factor in the fabrication of modern integrated circuits. The ever decreasing of interconnect pitch along with process enhancement into the nanometer regime had shifted the paradigm from a device-dominated to an interconnect-dominated methodology. In the design methodology, Model Order Reduction (MOR) reduces the size of large-scale simulation of on-chip interconnect to speed up the performance of design tools and chip validation. In approximating the original system, the passivity preserving MOR technique of using spectral zeros as positive real interpolation points preserves the stability and passivity of the system. In this work, statistical distribution techniques are proposed for the selection of spectral zeros. The proposed method is based on using the gaussian, uniform, binomial, and weibull distributions to select spectral zeros to better match moments with the least absolute error between the original and reduced-order systems. The results show that the reduced-order model developed using the Gaussian distributed Spectral zeros Projection (GSP) method offers higher accuracy and numerical stability compared to other distributions.
Original languageEnglish (US)
Pages (from-to)1-1
Number of pages1
JournalIEEE Access
DOIs
StatePublished - May 24 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-05-29
Acknowledgements: This work is supported by Mirpur University of Science and Technology (MUST), Mirpur - 10250, AJK, Pakistan, University of Poonch Rawalakot, AJK, 12350, Pakistan, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955, Saudi Arabia.

ASJC Scopus subject areas

  • General Engineering
  • General Computer Science
  • General Materials Science

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