Standards for the Characterization of Endurance in Resistive Switching Devices

Mario Lanza; Rainer Waser; Daniele Ielmini; J. Joshua Yang; Ludovic Goux; Jordi Suñe; Anthony Joseph Kenyon; Adnan Mehonic; Sabina Spiga; Vikas Rana; Stefan Wiefels; Stephan Menzel; Ilia Valov; Marco A. Villena; Enrique Miranda; Xu Jing; Francesca Campabadal; Mireia B. Gonzalez; Fernando Aguirre; Felix Palumbo; Kaichen Zhu; Juan Bautista Roldan; Francesco Maria Puglisi; Luca Larcher; Tuo-Hung Hou; Themis Prodromakis; Yuchao Yang; Peng Huang; Tianqing Wan; Yang Chai; Kin Leong Pey; Nagarajan Raghavan; Salvador Dueñas; Tao Wang; Qiangfei Xia; Sebastian Pazos

doi:10.1021/acsnano.1c06980

Standards for the Characterization of Endurance in Resistive Switching Devices

Mario Lanza, Rainer Waser, Daniele Ielmini, J. Joshua Yang, Ludovic Goux, Jordi Suñe, Anthony Joseph Kenyon, Adnan Mehonic, Sabina Spiga, Vikas Rana, Stefan Wiefels, Stephan Menzel, Ilia Valov, Marco A. Villena, Enrique Miranda, Xu Jing, Francesca Campabadal, Mireia B. Gonzalez, Fernando Aguirre, Felix PalumboKaichen Zhu, Juan Bautista Roldan, Francesco Maria Puglisi, Luca Larcher, Tuo-Hung Hou, Themis Prodromakis, Yuchao Yang, Peng Huang, Tianqing Wan, Yang Chai, Kin Leong Pey, Nagarajan Raghavan, Salvador Dueñas, Tao Wang, Qiangfei Xia, Sebastian Pazos

Research output: Contribution to journal › Article › peer-review

148 Scopus citations

Abstract

Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even

Original language	English (US)
Journal	ACS Nano
DOIs	https://doi.org/10.1021/acsnano.1c06980
State	Published - Nov 3 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-11-05
Acknowledgements: This work has been supported by the generous Baseline funding program of the King Abdullah University of Science and Technology (KAUST).

ASJC Scopus subject areas

General Physics and Astronomy
General Materials Science
General Engineering

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10.1021/acsnano.1c06980

https://repository.kaust.edu.sa/bitstream/10754/673119/1/acsnano.1c06980.pdf

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Lanza, M., Waser, R., Ielmini, D., Yang, J. J., Goux, L., Suñe, J., Kenyon, A. J., Mehonic, A., Spiga, S., Rana, V., Wiefels, S., Menzel, S., Valov, I., Villena, M. A., Miranda, E., Jing, X., Campabadal, F., Gonzalez, M. B., Aguirre, F., ... Pazos, S. (2021). Standards for the Characterization of Endurance in Resistive Switching Devices. ACS Nano. https://doi.org/10.1021/acsnano.1c06980

@article{22bd5e594fcd4005b213a4779d190a6c,

title = "Standards for the Characterization of Endurance in Resistive Switching Devices",

abstract = "Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even",

author = "Mario Lanza and Rainer Waser and Daniele Ielmini and Yang, {J. Joshua} and Ludovic Goux and Jordi Su{\~n}e and Kenyon, {Anthony Joseph} and Adnan Mehonic and Sabina Spiga and Vikas Rana and Stefan Wiefels and Stephan Menzel and Ilia Valov and Villena, {Marco A.} and Enrique Miranda and Xu Jing and Francesca Campabadal and Gonzalez, {Mireia B.} and Fernando Aguirre and Felix Palumbo and Kaichen Zhu and Roldan, {Juan Bautista} and Puglisi, {Francesco Maria} and Luca Larcher and Tuo-Hung Hou and Themis Prodromakis and Yuchao Yang and Peng Huang and Tianqing Wan and Yang Chai and Pey, {Kin Leong} and Nagarajan Raghavan and Salvador Due{\~n}as and Tao Wang and Qiangfei Xia and Sebastian Pazos",

note = "KAUST Repository Item: Exported on 2021-11-05 Acknowledgements: This work has been supported by the generous Baseline funding program of the King Abdullah University of Science and Technology (KAUST).",

year = "2021",

month = nov,

day = "3",

doi = "10.1021/acsnano.1c06980",

language = "English (US)",

journal = "ACS Nano",

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Lanza, M, Waser, R, Ielmini, D, Yang, JJ, Goux, L, Suñe, J, Kenyon, AJ, Mehonic, A, Spiga, S, Rana, V, Wiefels, S, Menzel, S, Valov, I, Villena, MA, Miranda, E, Jing, X, Campabadal, F, Gonzalez, MB, Aguirre, F, Palumbo, F, Zhu, K, Roldan, JB, Puglisi, FM, Larcher, L, Hou, T-H, Prodromakis, T, Yang, Y, Huang, P, Wan, T, Chai, Y, Pey, KL, Raghavan, N, Dueñas, S, Wang, T, Xia, Q & Pazos, S 2021, 'Standards for the Characterization of Endurance in Resistive Switching Devices', ACS Nano. https://doi.org/10.1021/acsnano.1c06980

TY - JOUR

T1 - Standards for the Characterization of Endurance in Resistive Switching Devices

AU - Lanza, Mario

AU - Waser, Rainer

AU - Ielmini, Daniele

AU - Yang, J. Joshua

AU - Goux, Ludovic

AU - Suñe, Jordi

AU - Kenyon, Anthony Joseph

AU - Mehonic, Adnan

AU - Spiga, Sabina

AU - Rana, Vikas

AU - Wiefels, Stefan

AU - Menzel, Stephan

AU - Valov, Ilia

AU - Villena, Marco A.

AU - Miranda, Enrique

AU - Jing, Xu

AU - Campabadal, Francesca

AU - Gonzalez, Mireia B.

AU - Aguirre, Fernando

AU - Palumbo, Felix

AU - Zhu, Kaichen

AU - Roldan, Juan Bautista

AU - Puglisi, Francesco Maria

AU - Larcher, Luca

AU - Hou, Tuo-Hung

AU - Prodromakis, Themis

AU - Yang, Yuchao

AU - Huang, Peng

AU - Wan, Tianqing

AU - Chai, Yang

AU - Pey, Kin Leong

AU - Raghavan, Nagarajan

AU - Dueñas, Salvador

AU - Wang, Tao

AU - Xia, Qiangfei

AU - Pazos, Sebastian

N1 - KAUST Repository Item: Exported on 2021-11-05 Acknowledgements: This work has been supported by the generous Baseline funding program of the King Abdullah University of Science and Technology (KAUST).

PY - 2021/11/3

Y1 - 2021/11/3

N2 - Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even

AB - Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even

UR - http://hdl.handle.net/10754/673119

UR - https://pubs.acs.org/doi/10.1021/acsnano.1c06980

U2 - 10.1021/acsnano.1c06980

DO - 10.1021/acsnano.1c06980

M3 - Article

C2 - 34730935

SN - 1936-0851

JO - ACS Nano

JF - ACS Nano

ER -

Standards for the Characterization of Endurance in Resistive Switching Devices

Abstract

Bibliographical note

ASJC Scopus subject areas

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