Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells

D. Lüerßen; R. Bleher; H. Kalt; H. Richter; Th Schimmel; A. Rosenauer; D. Litvinov; A. Kamilli; D. Gerthsen; B. Jobst; K. Ohkawa; D. Hommel

doi:10.1016/S0022-0248(00)00168-8

Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells

D. Lüerßen, R. Bleher, H. Kalt, H. Richter, Th Schimmel, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, B. Jobst, K. Ohkawa, D. Hommel

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Pairs of bright spots are observed in microphotoluminescence intensity maps of ZnSe/ZnMgSSe quantum-well structures. These pairs are exactly aligned parallel to the [110] or [1̄10] directions. Atomic-force microscopy and plan-view transmission electron microscopy reveal that the bright emission spots are related to pairs of stacking faults. The enhanced radiative recombination is a result of exciton localization in the region where the stacking faults intersect the quantum wells. Cross-section transmission electron microscopy and microphotoluminescence spectroscopy show that in the case of Frank-type stacking faults (oriented along [110]) the wells are enlarged by up to 12 bilayers. The exciton localization is much shallower in the case of Shockley-type stacking-fault pairs (oriented along [1̄10]).

Original language	English (US)
Pages (from-to)	634-638
Number of pages	5
Journal	Journal of Crystal Growth
Volume	214
DOIs	https://doi.org/10.1016/S0022-0248(00)00168-8
State	Published - Jun 2 2000
Externally published	Yes
Event	The 9th International Conference on II-VI Compounds - Kyoto, Jpn Duration: Nov 1 1999 → Nov 5 1999

ASJC Scopus subject areas

Condensed Matter Physics
Materials Chemistry
Inorganic Chemistry

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10.1016/S0022-0248(00)00168-8

Cite this

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title = "Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells",

abstract = "Pairs of bright spots are observed in microphotoluminescence intensity maps of ZnSe/ZnMgSSe quantum-well structures. These pairs are exactly aligned parallel to the [110] or [{\=1}10] directions. Atomic-force microscopy and plan-view transmission electron microscopy reveal that the bright emission spots are related to pairs of stacking faults. The enhanced radiative recombination is a result of exciton localization in the region where the stacking faults intersect the quantum wells. Cross-section transmission electron microscopy and microphotoluminescence spectroscopy show that in the case of Frank-type stacking faults (oriented along [110]) the wells are enlarged by up to 12 bilayers. The exciton localization is much shallower in the case of Shockley-type stacking-fault pairs (oriented along [{\=1}10]).",

author = "D. L{\"u}er{\ss}en and R. Bleher and H. Kalt and H. Richter and Th Schimmel and A. Rosenauer and D. Litvinov and A. Kamilli and D. Gerthsen and B. Jobst and K. Ohkawa and D. Hommel",

year = "2000",

month = jun,

day = "2",

doi = "10.1016/S0022-0248(00)00168-8",

language = "English (US)",

volume = "214",

pages = "634--638",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

note = "The 9th International Conference on II-VI Compounds ; Conference date: 01-11-1999 Through 05-11-1999",

}

TY - JOUR

T1 - Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells

AU - Lüerßen, D.

AU - Bleher, R.

AU - Kalt, H.

AU - Richter, H.

AU - Schimmel, Th

AU - Rosenauer, A.

AU - Litvinov, D.

AU - Kamilli, A.

AU - Gerthsen, D.

AU - Jobst, B.

AU - Ohkawa, K.

AU - Hommel, D.

PY - 2000/6/2

Y1 - 2000/6/2

N2 - Pairs of bright spots are observed in microphotoluminescence intensity maps of ZnSe/ZnMgSSe quantum-well structures. These pairs are exactly aligned parallel to the [110] or [1̄10] directions. Atomic-force microscopy and plan-view transmission electron microscopy reveal that the bright emission spots are related to pairs of stacking faults. The enhanced radiative recombination is a result of exciton localization in the region where the stacking faults intersect the quantum wells. Cross-section transmission electron microscopy and microphotoluminescence spectroscopy show that in the case of Frank-type stacking faults (oriented along [110]) the wells are enlarged by up to 12 bilayers. The exciton localization is much shallower in the case of Shockley-type stacking-fault pairs (oriented along [1̄10]).

AB - Pairs of bright spots are observed in microphotoluminescence intensity maps of ZnSe/ZnMgSSe quantum-well structures. These pairs are exactly aligned parallel to the [110] or [1̄10] directions. Atomic-force microscopy and plan-view transmission electron microscopy reveal that the bright emission spots are related to pairs of stacking faults. The enhanced radiative recombination is a result of exciton localization in the region where the stacking faults intersect the quantum wells. Cross-section transmission electron microscopy and microphotoluminescence spectroscopy show that in the case of Frank-type stacking faults (oriented along [110]) the wells are enlarged by up to 12 bilayers. The exciton localization is much shallower in the case of Shockley-type stacking-fault pairs (oriented along [1̄10]).

UR - http://www.scopus.com/inward/record.url?scp=0343826074&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(00)00168-8

DO - 10.1016/S0022-0248(00)00168-8

M3 - Conference article

AN - SCOPUS:0343826074

SN - 0022-0248

VL - 214

SP - 634

EP - 638

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - The 9th International Conference on II-VI Compounds

Y2 - 1 November 1999 through 5 November 1999

ER -

Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells

Abstract

ASJC Scopus subject areas

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