Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells

D. Lüerßen, R. Bleher, H. Kalt, H. Richter, Th Schimmel, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, B. Jobst, K. Ohkawa, D. Hommel

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Pairs of bright spots are observed in microphotoluminescence intensity maps of ZnSe/ZnMgSSe quantum-well structures. These pairs are exactly aligned parallel to the [110] or [1̄10] directions. Atomic-force microscopy and plan-view transmission electron microscopy reveal that the bright emission spots are related to pairs of stacking faults. The enhanced radiative recombination is a result of exciton localization in the region where the stacking faults intersect the quantum wells. Cross-section transmission electron microscopy and microphotoluminescence spectroscopy show that in the case of Frank-type stacking faults (oriented along [110]) the wells are enlarged by up to 12 bilayers. The exciton localization is much shallower in the case of Shockley-type stacking-fault pairs (oriented along [1̄10]).

Original languageEnglish (US)
Pages (from-to)634-638
Number of pages5
JournalJournal of Crystal Growth
StatePublished - Jun 2 2000
Externally publishedYes
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: Nov 1 1999Nov 5 1999

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry


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