Abstract
We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (∼10-1Torr) shows p-type conductivity with a carrier concentration of ∼3×1016cm-3. This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (VO) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (∼10-5Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice.
Original language | English (US) |
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Pages (from-to) | 504-508 |
Number of pages | 5 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 253 |
Issue number | 3 |
DOIs | |
State | Published - Mar 1 2016 |
Bibliographical note
Funding Information:The authors at JNCASR sincerely acknowledge Prof. C.N.R. Rao for the funding and providing crystal growth and microscopy facility for this research. Part of this work is financially supported under a DST project SERB/RD/4302. H. Gholap sincerely acknowledge the Indian academy of Science, Bangalore for providing Summer Research Fellowship-2014 (PHYT22) and JNCSR for providing Visiting Fellowship Program 2014–2015 (JNC/F&E/VF-.102 (CPMU- 4) /2014/005). We also thank Anomitra Sil and Prof. Rajeev Ranjan in IISc, Bangalore for the X-ray data.
Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords
- Density functional theory
- Doping
- P-type conductivity
- Pulsed laser deposition
- Thins films
- ZnO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics