Abstract
Molybdenum disulphide (MoS2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (VTH) shift and reduced series resistance (RSD) were simultaneously achieved.
Original language | English (US) |
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Article number | 1700534 |
Journal | Physica Status Solidi (A) Applications and Materials Science |
Volume | 214 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2017 |
Bibliographical note
Publisher Copyright:© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords
- MoS
- TiO
- contacts
- field-effect transistors
- interfaces
- thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry