Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact

Woojin Park, Jung Wook Min, Sohail Faizan Shaikh, Muhammad Mustafa Hussain*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Molybdenum disulphide (MoS2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (VTH) shift and reduced series resistance (RSD) were simultaneously achieved.

Original languageEnglish (US)
Article number1700534
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume214
Issue number12
DOIs
StatePublished - Dec 2017

Bibliographical note

Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords

  • MoS
  • TiO
  • contacts
  • field-effect transistors
  • interfaces
  • thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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