Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

Bo Zhang; Tao Zheng; Qingxiao Wang; Zaibing Guo; Moon J. Kim; Husam N. Alshareef; Bruce E. Gnade

doi:10.1016/j.scriptamat.2018.03.040

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

Bo Zhang, Tao Zheng, Qingxiao Wang, Zaibing Guo, Moon J. Kim, Husam N. Alshareef, Bruce E. Gnade

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

Original language	English (US)
Pages (from-to)	36-39
Number of pages	4
Journal	Scripta Materialia
Volume	152
DOIs	https://doi.org/10.1016/j.scriptamat.2018.03.040
State	Published - Apr 14 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The research was partially financially supported by the University of Texas at Dallas. The authors acknowledge Dr. Gordon Pollock, Mr. Wallace Martin and Mr. Zane Borg for help with thin-film preparation.

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10.1016/j.scriptamat.2018.03.040

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@article{4a64df587d96418c9c58699ef8b9af51,

title = "Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators",

abstract = "The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.",

author = "Bo Zhang and Tao Zheng and Qingxiao Wang and Zaibing Guo and Kim, {Moon J.} and Alshareef, {Husam N.} and Gnade, {Bruce E.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The research was partially financially supported by the University of Texas at Dallas. The authors acknowledge Dr. Gordon Pollock, Mr. Wallace Martin and Mr. Zane Borg for help with thin-film preparation.",

year = "2018",

month = apr,

day = "14",

doi = "10.1016/j.scriptamat.2018.03.040",

language = "English (US)",

volume = "152",

pages = "36--39",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier",

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TY - JOUR

T1 - Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

AU - Zhang, Bo

AU - Zheng, Tao

AU - Wang, Qingxiao

AU - Guo, Zaibing

AU - Kim, Moon J.

AU - Alshareef, Husam N.

AU - Gnade, Bruce E.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The research was partially financially supported by the University of Texas at Dallas. The authors acknowledge Dr. Gordon Pollock, Mr. Wallace Martin and Mr. Zane Borg for help with thin-film preparation.

PY - 2018/4/14

Y1 - 2018/4/14

N2 - The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

AB - The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

UR - http://hdl.handle.net/10754/627635

UR - http://www.sciencedirect.com/science/article/pii/S1359646218302021

UR - http://www.scopus.com/inward/record.url?scp=85045462549&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2018.03.040

DO - 10.1016/j.scriptamat.2018.03.040

M3 - Article

AN - SCOPUS:85045462549

SN - 1359-6462

VL - 152

SP - 36

EP - 39

JO - Scripta Materialia

JF - Scripta Materialia

ER -

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

Abstract

Bibliographical note

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