Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

Bo Zhang, Tao Zheng, Qingxiao Wang, Zaibing Guo, Moon J. Kim, Husam N. Alshareef, Bruce E. Gnade

Research output: Contribution to journalArticlepeer-review

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The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.
Original languageEnglish (US)
Pages (from-to)36-39
Number of pages4
JournalScripta Materialia
StatePublished - Apr 14 2018

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