Stability scheme of ZnO-thin film resistive switching memory: Influence of defects by controllable oxygen pressure ratio

Hsin Wei Huang, Chen Fang Kang, Fang I. Lai, Hau He, Su Jien Lin, Yu Lun Chueh*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O2 pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) of ZnO at different O2 pressure ratios were investigated to reflect influence of structure to the stable switching behaviors. In addition, PL and XPS results were measured to investigate the different charge states triggered in ZnO by oxygen vacancies, which affect the stability of the switching behavior.

Original languageEnglish (US)
Pages (from-to)1-18
Number of pages18
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
StatePublished - 2013
Externally publishedYes

Bibliographical note

Funding Information:
The authors greatly acknowledge Professor Tai-Bor Wu at the National Tsing Hua University. The research was supported by the National Science Council through grant nos. 101-2112-M-007-015-MY3, NSC 101-2120-M-007-003, and 101-2218-E-007-009-MY3, and the National Tsing Hua University through grant no. 102N2022E1. YL Chueh greatly appreciates the use of facility at CNMM, National Tsing Hua University through grant no. 102N2744E1.

Keywords

  • O partial pressure
  • Oxygen defects
  • Resistive change memory
  • ZnO

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics

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