Stability scheme of ZnO-thin film resistive switching memory: Influence of defects by controllable oxygen pressure ratio

Hsin Wei Huang; Chen Fang Kang; Fang I. Lai; Hau He; Su Jien Lin; Yu Lun Chueh

doi:10.1186/1556-276X-8-483

Stability scheme of ZnO-thin film resistive switching memory: Influence of defects by controllable oxygen pressure ratio

Hsin Wei Huang, Chen Fang Kang, Fang I. Lai, Hau He, Su Jien Lin, Yu Lun Chueh^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O₂ pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) of ZnO at different O₂ pressure ratios were investigated to reflect influence of structure to the stable switching behaviors. In addition, PL and XPS results were measured to investigate the different charge states triggered in ZnO by oxygen vacancies, which affect the stability of the switching behavior.

Original language	English (US)
Pages (from-to)	1-18
Number of pages	18
Journal	Nanoscale Research Letters
Volume	8
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-8-483
State	Published - 2013
Externally published	Yes

Bibliographical note

Funding Information:
The authors greatly acknowledge Professor Tai-Bor Wu at the National Tsing Hua University. The research was supported by the National Science Council through grant nos. 101-2112-M-007-015-MY3, NSC 101-2120-M-007-003, and 101-2218-E-007-009-MY3, and the National Tsing Hua University through grant no. 102N2022E1. YL Chueh greatly appreciates the use of facility at CNMM, National Tsing Hua University through grant no. 102N2744E1.

Keywords

O partial pressure
Oxygen defects
Resistive change memory
ZnO

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

Access to Document

10.1186/1556-276X-8-483

Cite this

@article{93338ccb228f473aa0866cd12319ec92,

title = "Stability scheme of ZnO-thin film resistive switching memory: Influence of defects by controllable oxygen pressure ratio",

abstract = "We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O2 pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) of ZnO at different O2 pressure ratios were investigated to reflect influence of structure to the stable switching behaviors. In addition, PL and XPS results were measured to investigate the different charge states triggered in ZnO by oxygen vacancies, which affect the stability of the switching behavior.",

keywords = "O partial pressure, Oxygen defects, Resistive change memory, ZnO",

author = "Huang, {Hsin Wei} and Kang, {Chen Fang} and Lai, {Fang I.} and Hau He and Lin, {Su Jien} and Chueh, {Yu Lun}",

note = "Funding Information: The authors greatly acknowledge Professor Tai-Bor Wu at the National Tsing Hua University. The research was supported by the National Science Council through grant nos. 101-2112-M-007-015-MY3, NSC 101-2120-M-007-003, and 101-2218-E-007-009-MY3, and the National Tsing Hua University through grant no. 102N2022E1. YL Chueh greatly appreciates the use of facility at CNMM, National Tsing Hua University through grant no. 102N2744E1. ",

year = "2013",

doi = "10.1186/1556-276X-8-483",

language = "English (US)",

volume = "8",

pages = "1--18",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Stability scheme of ZnO-thin film resistive switching memory

T2 - Influence of defects by controllable oxygen pressure ratio

AU - Huang, Hsin Wei

AU - Kang, Chen Fang

AU - Lai, Fang I.

AU - He, Hau

AU - Lin, Su Jien

AU - Chueh, Yu Lun

N1 - Funding Information: The authors greatly acknowledge Professor Tai-Bor Wu at the National Tsing Hua University. The research was supported by the National Science Council through grant nos. 101-2112-M-007-015-MY3, NSC 101-2120-M-007-003, and 101-2218-E-007-009-MY3, and the National Tsing Hua University through grant no. 102N2022E1. YL Chueh greatly appreciates the use of facility at CNMM, National Tsing Hua University through grant no. 102N2744E1.

PY - 2013

Y1 - 2013

N2 - We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O2 pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) of ZnO at different O2 pressure ratios were investigated to reflect influence of structure to the stable switching behaviors. In addition, PL and XPS results were measured to investigate the different charge states triggered in ZnO by oxygen vacancies, which affect the stability of the switching behavior.

AB - We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O2 pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) of ZnO at different O2 pressure ratios were investigated to reflect influence of structure to the stable switching behaviors. In addition, PL and XPS results were measured to investigate the different charge states triggered in ZnO by oxygen vacancies, which affect the stability of the switching behavior.

KW - O partial pressure

KW - Oxygen defects

KW - Resistive change memory

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84891413953&partnerID=8YFLogxK

U2 - 10.1186/1556-276X-8-483

DO - 10.1186/1556-276X-8-483

M3 - Article

AN - SCOPUS:84891413953

SN - 1931-7573

VL - 8

SP - 1

EP - 18

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

ER -

Stability scheme of ZnO-thin film resistive switching memory: Influence of defects by controllable oxygen pressure ratio

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this