Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue-green laser diodes

M. Behringer; K. Ohkawa; V. Großmann; H. Heinke; K. Leonardi; M. Fehrer; D. Hommel; M. Kuttler; M. Strassburg; D. Bimberg

doi:10.1016/s0022-0248(98)80121-8

Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue-green laser diodes

M. Behringer^*, K. Ohkawa, V. Großmann, H. Heinke, K. Leonardi, M. Fehrer, D. Hommel, M. Kuttler, M. Strassburg, D. Bimberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Thermally induced Cd diffusion in CdZn(S)Se/Zn(S)Se multi-quantum well-structures has been investigated in order to study point defects and their generation in II-VI/III-V heterostructures and to find a thermally stable quantum well design. Samples were annealed in Zn atmosphere and diffusion coefficients were determined with secondary ion mass spectroscopy. Cd diffusion coefficients as low as 1.2 ×10^-18 cm²/s at T = 575°C were found in a CdZnSSe/ZnSSe structure. Samples annealed in Zn atmosphere indicate a higher stability of CdZnSSe than of CdZnSe, but samples annealed in N₂ seem to show the opposite tendency. Laser diodes show low threshold current densities of 400 A/cm² for both kinds of wells.

Original language	English (US)
Pages (from-to)	580-584
Number of pages	5
Journal	Journal of Crystal Growth
Volume	184-185
DOIs	https://doi.org/10.1016/s0022-0248(98)80121-8
State	Published - 1998
Externally published	Yes

Keywords

Cd diffusion
CdZnSSe
Degradation
II-VI laser diodes
Thermal stability

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/s0022-0248(98)80121-8

Cite this

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title = "Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue-green laser diodes",

abstract = "Thermally induced Cd diffusion in CdZn(S)Se/Zn(S)Se multi-quantum well-structures has been investigated in order to study point defects and their generation in II-VI/III-V heterostructures and to find a thermally stable quantum well design. Samples were annealed in Zn atmosphere and diffusion coefficients were determined with secondary ion mass spectroscopy. Cd diffusion coefficients as low as 1.2 ×10-18 cm2/s at T = 575°C were found in a CdZnSSe/ZnSSe structure. Samples annealed in Zn atmosphere indicate a higher stability of CdZnSSe than of CdZnSe, but samples annealed in N2 seem to show the opposite tendency. Laser diodes show low threshold current densities of 400 A/cm2 for both kinds of wells.",

keywords = "Cd diffusion, CdZnSSe, Degradation, II-VI laser diodes, Thermal stability",

author = "M. Behringer and K. Ohkawa and V. Gro{\ss}mann and H. Heinke and K. Leonardi and M. Fehrer and D. Hommel and M. Kuttler and M. Strassburg and D. Bimberg",

year = "1998",

doi = "10.1016/s0022-0248(98)80121-8",

language = "English (US)",

volume = "184-185",

pages = "580--584",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue-green laser diodes

AU - Behringer, M.

AU - Ohkawa, K.

AU - Großmann, V.

AU - Heinke, H.

AU - Leonardi, K.

AU - Fehrer, M.

AU - Hommel, D.

AU - Kuttler, M.

AU - Strassburg, M.

AU - Bimberg, D.

PY - 1998

Y1 - 1998

N2 - Thermally induced Cd diffusion in CdZn(S)Se/Zn(S)Se multi-quantum well-structures has been investigated in order to study point defects and their generation in II-VI/III-V heterostructures and to find a thermally stable quantum well design. Samples were annealed in Zn atmosphere and diffusion coefficients were determined with secondary ion mass spectroscopy. Cd diffusion coefficients as low as 1.2 ×10-18 cm2/s at T = 575°C were found in a CdZnSSe/ZnSSe structure. Samples annealed in Zn atmosphere indicate a higher stability of CdZnSSe than of CdZnSe, but samples annealed in N2 seem to show the opposite tendency. Laser diodes show low threshold current densities of 400 A/cm2 for both kinds of wells.

AB - Thermally induced Cd diffusion in CdZn(S)Se/Zn(S)Se multi-quantum well-structures has been investigated in order to study point defects and their generation in II-VI/III-V heterostructures and to find a thermally stable quantum well design. Samples were annealed in Zn atmosphere and diffusion coefficients were determined with secondary ion mass spectroscopy. Cd diffusion coefficients as low as 1.2 ×10-18 cm2/s at T = 575°C were found in a CdZnSSe/ZnSSe structure. Samples annealed in Zn atmosphere indicate a higher stability of CdZnSSe than of CdZnSe, but samples annealed in N2 seem to show the opposite tendency. Laser diodes show low threshold current densities of 400 A/cm2 for both kinds of wells.

KW - Cd diffusion

KW - CdZnSSe

KW - Degradation

KW - II-VI laser diodes

KW - Thermal stability

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U2 - 10.1016/s0022-0248(98)80121-8

DO - 10.1016/s0022-0248(98)80121-8

M3 - Article

AN - SCOPUS:11544344993

SN - 0022-0248

VL - 184-185

SP - 580

EP - 584

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue-green laser diodes

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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