Abstract
Spintronic devices based on DWss and skyrmions have shown significant potential for applications in energy-efficient data storage and beyond CMOS computing architectures. Based on the ferromagnetic multilayer spintronic devices, a magnetic field-gated and current-controlled spintronic Leaky Integrate-and-Fire (LIF) neuron with memtransistor properties is showcased. The memtransistor property allows for tuning firing characteristics through external magnetic fields and current pulses. A LIF neuron model is developed based on measured characteristics to integrate the device into system-level Spiking Neural Networks (SNNs). The scalability of the neuron device is confirmed with the micromagnetic simulations in a domain-wall magnetic tunnel junction device. When integrated into SNN and convolutional SNN frameworks, the device achieves classification precision above 96%. The study highlights the device's potential as a neuron in hardware SNN architecture-based neuromorphic computing applications, combining memtransistor properties of the device and high pattern classification accuracy. The results demonstrate a promising path toward developing energy-efficient and scalable neural networks.
Original language | English (US) |
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Journal | Advanced Electronic Materials |
DOIs | |
State | Accepted/In press - 2025 |
Bibliographical note
Publisher Copyright:© 2025 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH.
Keywords
- (LIF) neuron
- domain Wall
- micromagnetics
- spiking neural networks
- spintronics memtransistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials