Spintronic Memtransistor Leaky Integrate and Fire Neuron for Spiking Neural Networks

Aijaz H. Lone*, Meng Tang, Daniel N. Rahimi, Xuecui Zou, Dongxing Zheng, Hossein Fariborzi, Xixiang Zhang, Gianluca Setti

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Spintronic devices based on DWss and skyrmions have shown significant potential for applications in energy-efficient data storage and beyond CMOS computing architectures. Based on the ferromagnetic multilayer spintronic devices, a magnetic field-gated and current-controlled spintronic Leaky Integrate-and-Fire (LIF) neuron with memtransistor properties is showcased. The memtransistor property allows for tuning firing characteristics through external magnetic fields and current pulses. A LIF neuron model is developed based on measured characteristics to integrate the device into system-level Spiking Neural Networks (SNNs). The scalability of the neuron device is confirmed with the micromagnetic simulations in a domain-wall magnetic tunnel junction device. When integrated into SNN and convolutional SNN frameworks, the device achieves classification precision above 96%. The study highlights the device's potential as a neuron in hardware SNN architecture-based neuromorphic computing applications, combining memtransistor properties of the device and high pattern classification accuracy. The results demonstrate a promising path toward developing energy-efficient and scalable neural networks.

Original languageEnglish (US)
JournalAdvanced Electronic Materials
DOIs
StateAccepted/In press - 2025

Bibliographical note

Publisher Copyright:
© 2025 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH.

Keywords

  • (LIF) neuron
  • domain Wall
  • micromagnetics
  • spiking neural networks
  • spintronics memtransistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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