Spin relaxation in InGaN quantum disks in GaN nanowires

Animesh Banerjee, Dog, Junseok Heo, Aurelien Manchon, Wei Guo, Pallab K. Bhattacharya

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of ∼100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values. © 2011 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)5396-5400
Number of pages5
JournalNano Letters
Issue number12
StatePublished - Dec 14 2011

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): N012509-00
Acknowledgements: The work is supported by KAUST under Grant N012509-00.

ASJC Scopus subject areas

  • Bioengineering
  • General Materials Science
  • General Chemistry
  • Mechanical Engineering
  • Condensed Matter Physics


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