Abstract
The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of ∼100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values. © 2011 American Chemical Society.
Original language | English (US) |
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Pages (from-to) | 5396-5400 |
Number of pages | 5 |
Journal | Nano Letters |
Volume | 11 |
Issue number | 12 |
DOIs | |
State | Published - Dec 14 2011 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): N012509-00
Acknowledgements: The work is supported by KAUST under Grant N012509-00.
ASJC Scopus subject areas
- Bioengineering
- General Materials Science
- General Chemistry
- Mechanical Engineering
- Condensed Matter Physics