TY - GEN
T1 - Spin-Orbit Torque Driven Multi-State Device for Memory Applications
AU - Amara, Selma
AU - Myrzakhan, Ulan
AU - Alsaui, Abdulmohsen
AU - Alawein, Meshal
AU - Fariborzi, Hossein
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2019/3
Y1 - 2019/3
N2 - We report the design, fabrication and measurement of a spin-orbit torque (SOT) driven multi-state memory. The multi-state memory is based on a 3-nm thick Ni81Fe19 (Py) patterned in the shape of four intersecting ellipses (octagram). Writing is performed by injecting a charge current along one of the Pt wires, which generates a transverse pure spin current capable of switching Py between its states. Information is read through a magnetic tunnel junction (MTJ) using four-point technique.
AB - We report the design, fabrication and measurement of a spin-orbit torque (SOT) driven multi-state memory. The multi-state memory is based on a 3-nm thick Ni81Fe19 (Py) patterned in the shape of four intersecting ellipses (octagram). Writing is performed by injecting a charge current along one of the Pt wires, which generates a transverse pure spin current capable of switching Py between its states. Information is read through a magnetic tunnel junction (MTJ) using four-point technique.
UR - http://hdl.handle.net/10754/655944
UR - https://ieeexplore.ieee.org/document/8731027/
UR - http://www.scopus.com/inward/record.url?scp=85067785009&partnerID=8YFLogxK
U2 - 10.1109/EDTM.2019.8731027
DO - 10.1109/EDTM.2019.8731027
M3 - Conference contribution
SN - 9781538665084
SP - 371
EP - 373
BT - 2019 Electron Devices Technology and Manufacturing Conference (EDTM)
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -