Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

Arthur Useinov; Jürgen Kosel

doi:10.1109/TMAG.2011.2153182

Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

Arthur Useinov, Jürgen Kosel

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13 Scopus citations

Abstract

Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.

Original language	English (US)
Pages (from-to)	2724-2727
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	47
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2011.2153182
State	Published - Oct 2011

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KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2011.2153182

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title = "Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions",

abstract = "Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. {\textcopyright} 2011 IEEE.",

author = "Arthur Useinov and J{\"u}rgen Kosel",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2011",

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doi = "10.1109/TMAG.2011.2153182",

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journal = "IEEE Transactions on Magnetics",

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T1 - Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

AU - Useinov, Arthur

AU - Kosel, Jürgen

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2011/10

Y1 - 2011/10

N2 - Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.

AB - Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.

UR - http://hdl.handle.net/10754/564439

UR - https://ieeexplore.ieee.org/document/5773493/

UR - http://www.scopus.com/inward/record.url?scp=80053551930&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2011.2153182

DO - 10.1109/TMAG.2011.2153182

M3 - Article

SN - 0018-9464

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 10

ER -

Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

Abstract

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