The development of artificial neural networks using memristors is gaining a lot of interest among technological companies because it can reduce the computing time and energy consumption. There is still no memristor, made of any material, capable to provide the ideal figures-of-merit required for the implementation of artificial neural networks, meaning that more research is required. Here we present the use of multilayer hexagonal boron nitride based memristors to implement spiking neural networks for image classification. Our study indicates that the recognition accuracy of the network is high, and that can be resilient to device variability if the number of neurons employed is large enough. There are very few studies that present the use of a two-dimensional material for the implementation of synapses of different features; in our case, in addition to a study of the synaptic characteristics of our memristive devices, we deal with complete spiking neural network training and inference processes.
Bibliographical noteKAUST Repository Item: Exported on 2022-09-19
Acknowledgements: This work has been supported by the Ministry of Science and Technology of China (2018YFE0100800), the National Natural Science Foundation of China (grant no. 61874075), the Collaborative Innovation Centre of Suzhou Nano Science & Technology, the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the 111 Project from the State Administration of Foreign Experts Affairs of China. We also acknowledge the Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain) and European Regional Development Fund (ERDF) under projects A-TIC-117-UGR18, B-TIC-624-UGR20 and IE2017-5414, as well as the Spanish Ministry of Science, Innovation and Universities and ERDF fund under project RTI2018-098983-B-I00. M.L. acknowledges generous support from the King Abdullah University of Science and Technology.