@inproceedings{76992ec954d94df6a0dc2683ad6ec5f1,
title = "Spatial bandgap tuning in long wavelength InAs quantum dots-in-well laser structure",
abstract = "We employed the postgrowth impurity-free vacancy diffusion technique to selectively tune the bandgap of the InAs/InGaAlAs dots-in-well laser structure grown on (100) InP substrate. A blueshift up to 170 nm with a significant decrease in the photoluminescence linewidth has been observed. Spatial control of the bandgap shifts has been achieved using SiO 2 and Si xN y layers as annealing caps. A differential wavelength shift of 76 nm has been observed after a rapid thermal annealing step at 750°C for 30 s. In contrast to most reported results in other material systems using similar process, we observed a larger bandgap shift from the Si xN y capped samples than from the SiO 2 capped samples. Our theoretical calculation indicates that the unusual intermixing behavior in this material system is governed by different interdiffusion rates of group-III atoms.",
author = "Yang Wang and Dimas, {Clara E.} and Djie, {Hery S.} and Ooi, {Boon S.} and Gerard Dang and Wayne Chang",
year = "2006",
language = "English (US)",
isbn = "1558998454",
series = "Materials Research Society Symposium Proceedings",
pages = "97--102",
booktitle = "Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications",
note = "2005 MRS Fall Meeting ; Conference date: 28-11-2005 Through 01-12-2005",
}