Spatial and Hyperfine Characteristics of SiV– and SiV0 Color Centers in Diamond: DFT Simulation

A. P. Nizovtsev; S. Ya Kilin; A. L. Pushkarchuk; S. A. Kuten; N. A. Poklonski; Dominik L. Michels; Dmitry Lyakhov; F. Jelezko

doi:10.1134/S1063782620120271

Spatial and Hyperfine Characteristics of SiV– and SiV0 Color Centers in Diamond: DFT Simulation

A. P. Nizovtsev, S. Ya Kilin, A. L. Pushkarchuk, S. A. Kuten, N. A. Poklonski, Dominik L. Michels, Dmitry Lyakhov, F. Jelezko

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4 Scopus citations

Abstract

Abstract: One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in diamond in which the electrons of paramagnetic color centers play a role of “fast” qubits, while nuclear spins of nearby 13C atoms can store quantum information for a very long time due to their exceptionally high isolation from the environment. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for the negatively charged “silicon-vacancy” (SiV–) and neutral (SiV0) color center, is a primary goal of this article, where we are presenting shortly our recent results of computer simulation of spatial and hyperfine characteristics of these SiV centers in H-terminated cluster C128[SiV]H98 along with their comparison with available experimental data.

Original language	English (US)
Pages (from-to)	1685-1688
Number of pages	4
Journal	Semiconductors
Volume	54
Issue number	12
DOIs	https://doi.org/10.1134/S1063782620120271
State	Published - Dec 4 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-12-16
Acknowledgements: This work has been supported in part by Belarusian Republican Foundation for Fundamental Research, grants no. FMS-036, and by National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute).

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@article{47165679707e43f998bfa70c67b91e0b,

title = "Spatial and Hyperfine Characteristics of SiV– and SiV0 Color Centers in Diamond: DFT Simulation",

abstract = "Abstract: One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in diamond in which the electrons of paramagnetic color centers play a role of “fast” qubits, while nuclear spins of nearby 13C atoms can store quantum information for a very long time due to their exceptionally high isolation from the environment. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for the negatively charged “silicon-vacancy” (SiV–) and neutral (SiV0) color center, is a primary goal of this article, where we are presenting shortly our recent results of computer simulation of spatial and hyperfine characteristics of these SiV centers in H-terminated cluster C128[SiV]H98 along with their comparison with available experimental data.",

author = "Nizovtsev, {A. P.} and Kilin, {S. Ya} and Pushkarchuk, {A. L.} and Kuten, {S. A.} and Poklonski, {N. A.} and Michels, {Dominik L.} and Dmitry Lyakhov and F. Jelezko",

note = "KAUST Repository Item: Exported on 2020-12-16 Acknowledgements: This work has been supported in part by Belarusian Republican Foundation for Fundamental Research, grants no. FMS-036, and by National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute).",

year = "2020",

month = dec,

day = "4",

doi = "10.1134/S1063782620120271",

language = "English (US)",

volume = "54",

pages = "1685--1688",

journal = "Semiconductors",

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TY - JOUR

T1 - Spatial and Hyperfine Characteristics of SiV– and SiV0 Color Centers in Diamond: DFT Simulation

AU - Nizovtsev, A. P.

AU - Kilin, S. Ya

AU - Pushkarchuk, A. L.

AU - Kuten, S. A.

AU - Poklonski, N. A.

AU - Michels, Dominik L.

AU - Lyakhov, Dmitry

AU - Jelezko, F.

N1 - KAUST Repository Item: Exported on 2020-12-16 Acknowledgements: This work has been supported in part by Belarusian Republican Foundation for Fundamental Research, grants no. FMS-036, and by National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute).

PY - 2020/12/4

Y1 - 2020/12/4

N2 - Abstract: One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in diamond in which the electrons of paramagnetic color centers play a role of “fast” qubits, while nuclear spins of nearby 13C atoms can store quantum information for a very long time due to their exceptionally high isolation from the environment. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for the negatively charged “silicon-vacancy” (SiV–) and neutral (SiV0) color center, is a primary goal of this article, where we are presenting shortly our recent results of computer simulation of spatial and hyperfine characteristics of these SiV centers in H-terminated cluster C128[SiV]H98 along with their comparison with available experimental data.

AB - Abstract: One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in diamond in which the electrons of paramagnetic color centers play a role of “fast” qubits, while nuclear spins of nearby 13C atoms can store quantum information for a very long time due to their exceptionally high isolation from the environment. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for the negatively charged “silicon-vacancy” (SiV–) and neutral (SiV0) color center, is a primary goal of this article, where we are presenting shortly our recent results of computer simulation of spatial and hyperfine characteristics of these SiV centers in H-terminated cluster C128[SiV]H98 along with their comparison with available experimental data.

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UR - http://link.springer.com/10.1134/S1063782620120271

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DO - 10.1134/S1063782620120271

M3 - Article

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VL - 54

SP - 1685

EP - 1688

JO - Semiconductors

JF - Semiconductors

IS - 12

ER -

Spatial and Hyperfine Characteristics of SiV– and SiV0 Color Centers in Diamond: DFT Simulation

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