Space-charge limited conduction with traps in poly(phenylene vinylene) light emitting diodes

INIS

• voltage 100%
• traps 100%
• light emitting diodes 100%
• space charge 100%
• devices 62%
• distribution 62%
• mobility 37%
• values 37%
• resistors 37%
• transport 25%
• impedance 25%
• capacitors 25%
• density 25%
• carriers 25%
• decay 25%
• variations 12%
• energy 12%
• doped materials 12%
• levels 12%
• power 12%
• capacitance 12%
• indium 12%
• thickness 12%
• injection 12%
• tunneling 12%
• density of states 12%
• tin oxides 12%
• temperature dependence 12%
• molecular orbital method 12%
• transients 12%
• carrier mobility 12%
• energy dependence 12%

Engineering

• Electric Potential 100%
• Light-Emitting Diode 100%
• Space Charge 100%
• Measurement 62%
• Characteristics 62%
• Transients 37%
• Impedance 25%
• Conductance 25%
• Networks (Circuits) 25%
• Temperature 25%
• Energy Engineering 25%
• High Temperature 25%
• Capacitance 12%
• Good Agreement 12%
• Indium-Tin-Oxide 12%
• Temperature Dependence 12%
• Carrier Mobility 12%
• Acceptor 12%
• Density of State 12%
• Highest Occupied Molecular Orbital 12%
• Current Flow 12%
• Resistor 12%
• Exponential Distribution 12%
• Decay Time 12%
• Parallel Resistor 12%
• Models 12%
• Thickness 12%
• Density 12%
• Fields 12%
• Zeros 12%
• Products 12%
• Expected Behavior 12%
• Assuming 12%
• Fowler-Nordheim Tunnelling 12%
• Dopant Density 12%
• Dominated Behavior 12%
• Series Resistor 12%

Physics

• Electric Potential 100%
• Light Emitting Diode 100%
• Space Charge 100%
• Transients 37%
• Value 37%
• Impedance 25%
• Temperature 25%
• Regimes 25%
• High Temperature 25%
• Oxide 12%
• Indium 12%
• Capacitance 12%
• Temperature Dependence 12%
• Orbitals 12%
• Carrier Mobility 12%
• Model 12%
• Frequencies 12%
• Shapes 12%
• Magnitude 12%
• Variations 12%
• Sites 12%
• Act 12%
• Injection 12%
• Tin 12%
• Density of States 12%