INIS
voltage
100%
traps
100%
light emitting diodes
100%
space charge
100%
devices
62%
distribution
62%
mobility
37%
values
37%
resistors
37%
transport
25%
impedance
25%
capacitors
25%
density
25%
carriers
25%
decay
25%
variations
12%
energy
12%
doped materials
12%
levels
12%
power
12%
capacitance
12%
indium
12%
thickness
12%
injection
12%
tunneling
12%
density of states
12%
tin oxides
12%
temperature dependence
12%
molecular orbital method
12%
transients
12%
carrier mobility
12%
energy dependence
12%
Engineering
Electric Potential
100%
Light-Emitting Diode
100%
Space Charge
100%
Measurement
62%
Characteristics
62%
Transients
37%
Impedance
25%
Conductance
25%
Networks (Circuits)
25%
Temperature
25%
Energy Engineering
25%
High Temperature
25%
Capacitance
12%
Good Agreement
12%
Indium-Tin-Oxide
12%
Temperature Dependence
12%
Carrier Mobility
12%
Acceptor
12%
Density of State
12%
Highest Occupied Molecular Orbital
12%
Current Flow
12%
Resistor
12%
Exponential Distribution
12%
Decay Time
12%
Parallel Resistor
12%
Models
12%
Thickness
12%
Density
12%
Fields
12%
Zeros
12%
Products
12%
Expected Behavior
12%
Assuming
12%
Fowler-Nordheim Tunnelling
12%
Dopant Density
12%
Dominated Behavior
12%
Series Resistor
12%
Physics
Electric Potential
100%
Light Emitting Diode
100%
Space Charge
100%
Transients
37%
Value
37%
Impedance
25%
Temperature
25%
Regimes
25%
High Temperature
25%
Oxide
12%
Indium
12%
Capacitance
12%
Temperature Dependence
12%
Orbitals
12%
Carrier Mobility
12%
Model
12%
Frequencies
12%
Shapes
12%
Magnitude
12%
Variations
12%
Sites
12%
Act
12%
Injection
12%
Tin
12%
Density of States
12%