Space-charge-limited charge injection from indium tin oxide into a starburst amine and its implications for organic light-emitting diodes

Carsten Giebeler; Homer Antoniadis; Donal D.C. Bradley; Yasuhiko Shirota

doi:10.1063/1.121392

Space-charge-limited charge injection from indium tin oxide into a starburst amine and its implications for organic light-emitting diodes

Carsten Giebeler, Homer Antoniadis, Donal D.C. Bradley, Yasuhiko Shirota

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148 Scopus citations

Abstract

We have investigated the hole-injection characteristics from indium tin-oxide (ITO) into 4,4′,4 ″-trisN,-(3-methylphenyl)-N-phenylaminotriphenylamine (m-MTDATA) and have measured the hole-carrier drift mobility of this compound in single-layer ITO/m-MTDATA/Au structures. We have found that ITO is able to provide trap-free space-charge-limited currents over a wide range of film thicknesses and have established unambiguously that the ITO/m-MTDATA is an ideal Ohmic contact at high electric fields. Our observations clarify the role of m-MTDATA as a voltage-lowering hole-injecting buffer layer in organic light-emitting diodes. © 1998 American Institute of Physics.

Original language	English (US)
Journal	Applied Physics Letters
Volume	72
Issue number	19
DOIs	https://doi.org/10.1063/1.121392
State	Published - Dec 1 1998
Externally published	Yes

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title = "Space-charge-limited charge injection from indium tin oxide into a starburst amine and its implications for organic light-emitting diodes",

abstract = "We have investigated the hole-injection characteristics from indium tin-oxide (ITO) into 4,4′,4 ″-trisN,-(3-methylphenyl)-N-phenylaminotriphenylamine (m-MTDATA) and have measured the hole-carrier drift mobility of this compound in single-layer ITO/m-MTDATA/Au structures. We have found that ITO is able to provide trap-free space-charge-limited currents over a wide range of film thicknesses and have established unambiguously that the ITO/m-MTDATA is an ideal Ohmic contact at high electric fields. Our observations clarify the role of m-MTDATA as a voltage-lowering hole-injecting buffer layer in organic light-emitting diodes. {\textcopyright} 1998 American Institute of Physics.",

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AU - Giebeler, Carsten

AU - Antoniadis, Homer

AU - Bradley, Donal D.C.

AU - Shirota, Yasuhiko

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AB - We have investigated the hole-injection characteristics from indium tin-oxide (ITO) into 4,4′,4 ″-trisN,-(3-methylphenyl)-N-phenylaminotriphenylamine (m-MTDATA) and have measured the hole-carrier drift mobility of this compound in single-layer ITO/m-MTDATA/Au structures. We have found that ITO is able to provide trap-free space-charge-limited currents over a wide range of film thicknesses and have established unambiguously that the ITO/m-MTDATA is an ideal Ohmic contact at high electric fields. Our observations clarify the role of m-MTDATA as a voltage-lowering hole-injecting buffer layer in organic light-emitting diodes. © 1998 American Institute of Physics.

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Space-charge-limited charge injection from indium tin oxide into a starburst amine and its implications for organic light-emitting diodes

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