Solvent vapor annealing of an insoluble molecular semiconductor

Aram Amassian, Vladimir A. Pozdin, Ruipeng Li, Detlef Matthias Smilgies, George G. Malliaras

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry.
Original languageEnglish (US)
Pages (from-to)2623
JournalJournal of Materials Chemistry
Issue number13
StatePublished - 2010

ASJC Scopus subject areas

  • Materials Chemistry
  • Chemistry(all)


Dive into the research topics of 'Solvent vapor annealing of an insoluble molecular semiconductor'. Together they form a unique fingerprint.

Cite this