Abstract
Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2623 |
| Journal | Journal of Materials Chemistry |
| Volume | 20 |
| Issue number | 13 |
| DOIs | |
| State | Published - 2010 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: The authors would like to thank Dr Jim Elman from FilMetrics, Inc. for helpful discussions and the J. A. Woollam Co., Inc. for providing a copy of the WVASE32 software. This work was supported by the Cornell Center for Materials Research, a National Science Foundation Materials Research Science and Engineering Center (NSF DMR-0520404), and was performed in part at the Cornell High Energy Synchrotron Source, also supported by the National Science Foundation and NIH-NIGMS (NSF DMR-0225180). Part of this work was also performed at the Cornell NanoScale Facility, a member of the National Nanotechnology Infrastructure Network, which is supported by the National Science Foundation (Grant ECS 03-35765). One of us (V. P.) would like to acknowledge the National Science Foundation for a graduate fellowship.
ASJC Scopus subject areas
- Materials Chemistry
- General Chemistry