Solution-processed ZnO nanoparticle-based transistors via a room-temperature photochemical conversion process

Yen Hung Lin; Hendrik Faber; Stephan Rossbauer; Thomas D. Anthopoulos

doi:10.1063/1.4804434

Solution-processed ZnO nanoparticle-based transistors via a room-temperature photochemical conversion process

Yen Hung Lin, Hendrik Faber, Stephan Rossbauer, Thomas D. Anthopoulos^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We report on zinc oxide (ZnO) nanoparticle-based transistors in which the solution-processed semiconducting layers are post-treated using UV light irradiation instead of high temperature annealing. Field-effect transistors based on these ZnO nanoparticle films exhibit n-channel characteristics with electron mobilities on the order of ∼10^-3 cm² V ^-1s^-1-a value comparable to that obtained from devices thermally annealed at 250 °C. Because of the photochemical nature of the process, the sample temperature during UV irradiation remains low and close to room temperature. This enables facile fabrication of ZnO transistors onto inexpensive, temperature-sensitive substrate materials such as plastic.

Original language	English (US)
Article number	193516
Journal	Applied Physics Letters
Volume	102
Issue number	19
DOIs	https://doi.org/10.1063/1.4804434
State	Published - May 13 2013
Externally published	Yes

Bibliographical note

Funding Information:
We are grateful to Dutch Polymer Institute (DPI) S-PLORE Grant No. 735 and European Research Council (ERC) AMPRO Project No. 280221 for financial support.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We report on zinc oxide (ZnO) nanoparticle-based transistors in which the solution-processed semiconducting layers are post-treated using UV light irradiation instead of high temperature annealing. Field-effect transistors based on these ZnO nanoparticle films exhibit n-channel characteristics with electron mobilities on the order of ∼10-3 cm2 V -1s-1-a value comparable to that obtained from devices thermally annealed at 250 °C. Because of the photochemical nature of the process, the sample temperature during UV irradiation remains low and close to room temperature. This enables facile fabrication of ZnO transistors onto inexpensive, temperature-sensitive substrate materials such as plastic.",

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AU - Faber, Hendrik

AU - Rossbauer, Stephan

AU - Anthopoulos, Thomas D.

N1 - Funding Information: We are grateful to Dutch Polymer Institute (DPI) S-PLORE Grant No. 735 and European Research Council (ERC) AMPRO Project No. 280221 for financial support.

PY - 2013/5/13

Y1 - 2013/5/13

N2 - We report on zinc oxide (ZnO) nanoparticle-based transistors in which the solution-processed semiconducting layers are post-treated using UV light irradiation instead of high temperature annealing. Field-effect transistors based on these ZnO nanoparticle films exhibit n-channel characteristics with electron mobilities on the order of ∼10-3 cm2 V -1s-1-a value comparable to that obtained from devices thermally annealed at 250 °C. Because of the photochemical nature of the process, the sample temperature during UV irradiation remains low and close to room temperature. This enables facile fabrication of ZnO transistors onto inexpensive, temperature-sensitive substrate materials such as plastic.

AB - We report on zinc oxide (ZnO) nanoparticle-based transistors in which the solution-processed semiconducting layers are post-treated using UV light irradiation instead of high temperature annealing. Field-effect transistors based on these ZnO nanoparticle films exhibit n-channel characteristics with electron mobilities on the order of ∼10-3 cm2 V -1s-1-a value comparable to that obtained from devices thermally annealed at 250 °C. Because of the photochemical nature of the process, the sample temperature during UV irradiation remains low and close to room temperature. This enables facile fabrication of ZnO transistors onto inexpensive, temperature-sensitive substrate materials such as plastic.

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Solution-processed ZnO nanoparticle-based transistors via a room-temperature photochemical conversion process

Abstract

Bibliographical note

ASJC Scopus subject areas

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