Solution processed self-assembled monolayer gate dielectrics for low-voltage organic transistors

James Ball; Paul H. Wöbkenberg; Florian Colléaux; Floris B. Kooistra; Jan C. Hummelen; Donal D.C. Bradley; Thomas D. Anthopoulos

Solution processed self-assembled monolayer gate dielectrics for low-voltage organic transistors

James Ball, Paul H. Wöbkenberg, Florian Colléaux, Floris B. Kooistra, Jan C. Hummelen, Donal D.C. Bradley, Thomas D. Anthopoulos

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Low-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics [1, 2] but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated. © 2009 Materials Research Society.

Original language	English (US)
Title of host publication	Materials Research Society Symposium Proceedings
Pages	20-25
Number of pages	6
Volume	1114
State	Published - Dec 1 2008
Externally published	Yes
Event	2008 MRS Fall Meeting - Boston, MA, United States Duration: Dec 1 2008 → Dec 5 2008

Other

Other	2008 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	12/1/08 → 12/5/08

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2019-11-27

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{123d195933f94449a89e833391653737,

title = "Solution processed self-assembled monolayer gate dielectrics for low-voltage organic transistors",

abstract = "Low-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics [1, 2] but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated. {\textcopyright} 2009 Materials Research Society.",

author = "James Ball and W{\"o}bkenberg, {Paul H.} and Florian Coll{\'e}aux and Kooistra, {Floris B.} and Hummelen, {Jan C.} and Bradley, {Donal D.C.} and Anthopoulos, {Thomas D.}",

note = "Generated from Scopus record by KAUST IRTS on 2019-11-27; 2008 MRS Fall Meeting ; Conference date: 01-12-2008 Through 05-12-2008",

year = "2008",

month = dec,

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language = "English (US)",

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volume = "1114",

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T1 - Solution processed self-assembled monolayer gate dielectrics for low-voltage organic transistors

AU - Ball, James

AU - Wöbkenberg, Paul H.

AU - Colléaux, Florian

AU - Kooistra, Floris B.

AU - Hummelen, Jan C.

AU - Bradley, Donal D.C.

AU - Anthopoulos, Thomas D.

N1 - Generated from Scopus record by KAUST IRTS on 2019-11-27

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Low-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics [1, 2] but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated. © 2009 Materials Research Society.

AB - Low-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics [1, 2] but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated. © 2009 Materials Research Society.

UR - http://www.scopus.com/inward/record.url?scp=77950508096&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77950508096

SN - 9781615677603

VL - 1114

SP - 20

EP - 25

BT - Materials Research Society Symposium Proceedings

T2 - 2008 MRS Fall Meeting

Y2 - 1 December 2008 through 5 December 2008

ER -

Solution processed self-assembled monolayer gate dielectrics for low-voltage organic transistors

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