Solution-processed molecular bis(naphthalene diimide) derivatives with high electron mobility

Lauren E. Polander, Shree P. Tiwari, Laxman Pandey, Brian M. Seifried, Qing Zhang, Stephen Barlow, Chad Risko, Jean Luc Brédas, Bernard Kippelen*, Seth R. Marder

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

107 Scopus citations


Top-gate bottom-contact field-effect transistors based on solution-processed films of molecules in which two naphthalene-1,8:4,5- bis(dicarboxdiimide)s are bridged by thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-d]thiophene and dithieno[3,2-b:2′, 3′-d]pyrrole exhibit electron mobility values of up to 1.5 cm2 V-1 s-1.

Original languageEnglish (US)
Pages (from-to)3408-3410
Number of pages3
JournalChemistry of Materials
Issue number15
StatePublished - Aug 9 2011
Externally publishedYes


  • electronic materials
  • naphthalene diimide
  • organic semiconductors

ASJC Scopus subject areas

  • General Chemistry
  • General Chemical Engineering
  • Materials Chemistry


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