Solution-processed molecular bis(naphthalene diimide) derivatives with high electron mobility

Lauren E. Polander, Shree P. Tiwari, Laxman Pandey, Brian M. Seifried, Qing Zhang, Stephen Barlow, Chad Risko, Jean-Luc Bredas, Bernard Kippelen*, Seth R. Marder

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

104 Scopus citations


Top-gate bottom-contact field-effect transistors based on solution-processed films of molecules in which two naphthalene-1,8:4,5- bis(dicarboxdiimide)s are bridged by thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-d]thiophene and dithieno[3,2-b:2′, 3′-d]pyrrole exhibit electron mobility values of up to 1.5 cm 2 V -1 s -1 .

Original languageEnglish (US)
Pages (from-to)3408-3410
Number of pages3
JournalChemistry of Materials
Issue number15
StatePublished - Aug 9 2011


  • electronic materials
  • naphthalene diimide
  • organic semiconductors

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry


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