Solution-processed molecular bis(naphthalene diimide) derivatives with high electron mobility

Lauren E. Polander; Shree P. Tiwari; Laxman Pandey; Brian M. Seifried; Qing Zhang; Stephen Barlow; Chad Risko; Jean Luc Brédas; Bernard Kippelen; Seth R. Marder

doi:10.1021/cm201729s

Solution-processed molecular bis(naphthalene diimide) derivatives with high electron mobility

Lauren E. Polander, Shree P. Tiwari, Laxman Pandey, Brian M. Seifried, Qing Zhang, Stephen Barlow, Chad Risko, Jean Luc Brédas, Bernard Kippelen^*, Seth R. Marder

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

107 Scopus citations

Abstract

Top-gate bottom-contact field-effect transistors based on solution-processed films of molecules in which two naphthalene-1,8:4,5- bis(dicarboxdiimide)s are bridged by thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-d]thiophene and dithieno[3,2-b:2′, 3′-d]pyrrole exhibit electron mobility values of up to 1.5 cm² V^-1 s^-1.

Original language	English (US)
Pages (from-to)	3408-3410
Number of pages	3
Journal	Chemistry of Materials
Volume	23
Issue number	15
DOIs	https://doi.org/10.1021/cm201729s
State	Published - Aug 9 2011
Externally published	Yes

Keywords

electronic materials
naphthalene diimide
organic semiconductors

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering
Materials Chemistry

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10.1021/cm201729s

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title = "Solution-processed molecular bis(naphthalene diimide) derivatives with high electron mobility",

abstract = "Top-gate bottom-contact field-effect transistors based on solution-processed films of molecules in which two naphthalene-1,8:4,5- bis(dicarboxdiimide)s are bridged by thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-d]thiophene and dithieno[3,2-b:2′, 3′-d]pyrrole exhibit electron mobility values of up to 1.5 cm2 V-1 s-1.",

keywords = "electronic materials, naphthalene diimide, organic semiconductors",

author = "Polander, {Lauren E.} and Tiwari, {Shree P.} and Laxman Pandey and Seifried, {Brian M.} and Qing Zhang and Stephen Barlow and Chad Risko and Br{\'e}das, {Jean Luc} and Bernard Kippelen and Marder, {Seth R.}",

year = "2011",

month = aug,

day = "9",

doi = "10.1021/cm201729s",

language = "English (US)",

volume = "23",

pages = "3408--3410",

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publisher = "AMER CHEMICAL SOC",

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T1 - Solution-processed molecular bis(naphthalene diimide) derivatives with high electron mobility

AU - Polander, Lauren E.

AU - Tiwari, Shree P.

AU - Pandey, Laxman

AU - Seifried, Brian M.

AU - Zhang, Qing

AU - Barlow, Stephen

AU - Risko, Chad

AU - Brédas, Jean Luc

AU - Kippelen, Bernard

AU - Marder, Seth R.

PY - 2011/8/9

Y1 - 2011/8/9

N2 - Top-gate bottom-contact field-effect transistors based on solution-processed films of molecules in which two naphthalene-1,8:4,5- bis(dicarboxdiimide)s are bridged by thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-d]thiophene and dithieno[3,2-b:2′, 3′-d]pyrrole exhibit electron mobility values of up to 1.5 cm2 V-1 s-1.

AB - Top-gate bottom-contact field-effect transistors based on solution-processed films of molecules in which two naphthalene-1,8:4,5- bis(dicarboxdiimide)s are bridged by thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-d]thiophene and dithieno[3,2-b:2′, 3′-d]pyrrole exhibit electron mobility values of up to 1.5 cm2 V-1 s-1.

KW - electronic materials

KW - naphthalene diimide

KW - organic semiconductors

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U2 - 10.1021/cm201729s

DO - 10.1021/cm201729s

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SP - 3408

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JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 15

ER -

Solution-processed molecular bis(naphthalene diimide) derivatives with high electron mobility

Abstract

Keywords

ASJC Scopus subject areas

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