Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics

James M. Ball; Paul H. Wöbkenberg; Florian Colléaux; Jeremy Smith; Donal D.C. Bradley; Thomas D. Anthopoulos

doi:10.1117/12.825339

Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics

James M. Ball, Paul H. Wöbkenberg, Florian Colléaux, Jeremy Smith, Donal D.C. Bradley, Thomas D. Anthopoulos

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Reduction in the operating voltage of organic field-effect transistors (OFETs) is sought for their successful implementation into future portable and low-power electronic applications. Here we demonstrate OFETs with operation below 2 V enabled by the use of self-assembled monolayer (SAM) gate dielectrics with high geometrical capacitances. A high surface energy monolayer is chosen to allow processing of small molecule semiconductors from solution. Impedance spectroscopy measurements of metal-insulator-semiconductor devices suggest the geometrical capacitance of the alumina-SAM dielectric can reach ∼1 μF/cm² when accumulating charge at the semiconductor-insulator interface. Atomic force microscopy images reveal that the glass substrates and the SAM-functionalized aluminum gate electrode display significant roughness. Despite this, mobilities of 0.02 cm²/Vs are demonstrated. These results represent an important step towards low-power solution processable electronics.

Original language	English (US)
Title of host publication	Organic Field-Effect Transistors VIII
DOIs	https://doi.org/10.1117/12.825339
State	Published - 2009
Externally published	Yes
Event	Organic Field-Effect Transistors VIII - San Diego, CA, United States Duration: Aug 3 2009 → Aug 5 2009

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7417
ISSN (Print)	0277-786X

Other

Other	Organic Field-Effect Transistors VIII
Country/Territory	United States
City	San Diego, CA
Period	08/3/09 → 08/5/09

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2019-11-27

Keywords

Atomic force microscopy
Low-voltage
Metal-insulator-semiconductor
Organic field-effect transistor
Organic semiconductor
Organic thin-film transistor
Self-assembled monolayer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.825339

Cite this

Ball, J. M., Wöbkenberg, P. H., Colléaux, F., Smith, J., Bradley, D. D. C., & Anthopoulos, T. D. (2009). Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics. In Organic Field-Effect Transistors VIII Article 741711 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7417). https://doi.org/10.1117/12.825339

@inproceedings{e4005085d0784f7ca621b4270c9b1cce,

title = "Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics",

abstract = "Reduction in the operating voltage of organic field-effect transistors (OFETs) is sought for their successful implementation into future portable and low-power electronic applications. Here we demonstrate OFETs with operation below 2 V enabled by the use of self-assembled monolayer (SAM) gate dielectrics with high geometrical capacitances. A high surface energy monolayer is chosen to allow processing of small molecule semiconductors from solution. Impedance spectroscopy measurements of metal-insulator-semiconductor devices suggest the geometrical capacitance of the alumina-SAM dielectric can reach ∼1 μF/cm2 when accumulating charge at the semiconductor-insulator interface. Atomic force microscopy images reveal that the glass substrates and the SAM-functionalized aluminum gate electrode display significant roughness. Despite this, mobilities of 0.02 cm2/Vs are demonstrated. These results represent an important step towards low-power solution processable electronics.",

keywords = "Atomic force microscopy, Low-voltage, Metal-insulator-semiconductor, Organic field-effect transistor, Organic semiconductor, Organic thin-film transistor, Self-assembled monolayer",

author = "Ball, {James M.} and W{\"o}bkenberg, {Paul H.} and Florian Coll{\'e}aux and Jeremy Smith and Bradley, {Donal D.C.} and Anthopoulos, {Thomas D.}",

note = "Generated from Scopus record by KAUST IRTS on 2019-11-27; Organic Field-Effect Transistors VIII ; Conference date: 03-08-2009 Through 05-08-2009",

year = "2009",

doi = "10.1117/12.825339",

language = "English (US)",

isbn = "9780819477071",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Organic Field-Effect Transistors VIII",

}

Ball, JM, Wöbkenberg, PH, Colléaux, F, Smith, J, Bradley, DDC & Anthopoulos, TD 2009, Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics. in Organic Field-Effect Transistors VIII., 741711, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7417, Organic Field-Effect Transistors VIII, San Diego, CA, United States, 08/3/09. https://doi.org/10.1117/12.825339

Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics. / Ball, James M.; Wöbkenberg, Paul H.; Colléaux, Florian et al.
Organic Field-Effect Transistors VIII. 2009. 741711 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7417).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics

AU - Ball, James M.

AU - Wöbkenberg, Paul H.

AU - Colléaux, Florian

AU - Smith, Jeremy

AU - Bradley, Donal D.C.

AU - Anthopoulos, Thomas D.

N1 - Generated from Scopus record by KAUST IRTS on 2019-11-27

PY - 2009

Y1 - 2009

N2 - Reduction in the operating voltage of organic field-effect transistors (OFETs) is sought for their successful implementation into future portable and low-power electronic applications. Here we demonstrate OFETs with operation below 2 V enabled by the use of self-assembled monolayer (SAM) gate dielectrics with high geometrical capacitances. A high surface energy monolayer is chosen to allow processing of small molecule semiconductors from solution. Impedance spectroscopy measurements of metal-insulator-semiconductor devices suggest the geometrical capacitance of the alumina-SAM dielectric can reach ∼1 μF/cm2 when accumulating charge at the semiconductor-insulator interface. Atomic force microscopy images reveal that the glass substrates and the SAM-functionalized aluminum gate electrode display significant roughness. Despite this, mobilities of 0.02 cm2/Vs are demonstrated. These results represent an important step towards low-power solution processable electronics.

AB - Reduction in the operating voltage of organic field-effect transistors (OFETs) is sought for their successful implementation into future portable and low-power electronic applications. Here we demonstrate OFETs with operation below 2 V enabled by the use of self-assembled monolayer (SAM) gate dielectrics with high geometrical capacitances. A high surface energy monolayer is chosen to allow processing of small molecule semiconductors from solution. Impedance spectroscopy measurements of metal-insulator-semiconductor devices suggest the geometrical capacitance of the alumina-SAM dielectric can reach ∼1 μF/cm2 when accumulating charge at the semiconductor-insulator interface. Atomic force microscopy images reveal that the glass substrates and the SAM-functionalized aluminum gate electrode display significant roughness. Despite this, mobilities of 0.02 cm2/Vs are demonstrated. These results represent an important step towards low-power solution processable electronics.

KW - Atomic force microscopy

KW - Low-voltage

KW - Metal-insulator-semiconductor

KW - Organic field-effect transistor

KW - Organic semiconductor

KW - Organic thin-film transistor

KW - Self-assembled monolayer

UR - http://www.scopus.com/inward/record.url?scp=77955674136&partnerID=8YFLogxK

U2 - 10.1117/12.825339

DO - 10.1117/12.825339

M3 - Conference contribution

AN - SCOPUS:77955674136

SN - 9780819477071

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Organic Field-Effect Transistors VIII

T2 - Organic Field-Effect Transistors VIII

Y2 - 3 August 2009 through 5 August 2009

ER -

Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics

Abstract

Publication series

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Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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